Various embodiments provide a chip carrier structure. The chip carrier structure may include a structured metallic chip carrier; encapsulating material at least partially filling the structure; wherein the main surfaces of the metallic chip carrier are free from the encapsulating material.

Provided are a wafer level package and a method of manufacturing the same, wherein an underfill sufficiently fills a space between a redistribution substrate and a semiconductor chip, thereby reducing warpage. The wafer level package includes a redistribution substrate including at least one redistribution layer (RDL), a semiconductor chip on the redistribution substrate, and an underfill filling a space between the redistribution substrate and the semiconductor chip. The underfill covers side surfaces of the semiconductor chip. The redistribution substrate includes a trench having a line shape and extending in a first direction along a first side surface of the semiconductor chip.

A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the semiconductor chip, and first and second bonding vires by which the first internal leads and the some of the bonding pads are bonded to each other. The semiconductor device further includes a hanging pin section provided on the element non-forming surface of the semiconductor chip, and a sealing member with which the semiconductor chip is sealed including the hanging pin section and a bonding section between the first and second internal leads and the first and second bonding wires.

A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the semiconductor chip, and first and second bonding vires by which the first internal leads and the some of the bonding pads are bonded to each other. The semiconductor device further includes a hanging pin section provided on the element non-forming surface of the semiconductor chip, and a sealing member with which the semiconductor chip is sealed including the hanging pin section and a bonding section between the first and second internal leads and the first and second bonding wires.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

An improvement is achieved in the reliability of a semiconductor device. After a resin sealing portion is formed to seal a die pad, a semiconductor chip mounted over the die pad, a plurality of leads, and a plurality of wires electrically connecting a plurality of pad electrodes of the semiconductor chip with the leads, the resin sealing portion and the leads are cut with a rotary blade to manufacture the semiconductor device. In the semiconductor device, at least a portion of each of first and second leads is exposed from a lower surface of the sealing portion. End surfaces of the first and second leads as the respective cut surfaces thereof are exposed from each of side surfaces of the sealing portion as the cut surfaces of the resin sealing portion. The distance between a lower side of the end surface of the first lead and an upper surface of the sealing portion is smaller than the distance between an upper side of the end surface of the second lead adjacent thereto and the upper surface of the sealing portion.

An improvement is achieved in the reliability of a semiconductor device. After a resin sealing portion is formed to seal a die pad, a semiconductor chip mounted over the die pad, a plurality of leads, and a plurality of wires electrically connecting a plurality of pad electrodes of the semiconductor chip with the leads, the resin sealing portion and the leads are cut with a rotary blade to manufacture the semiconductor device. In the semiconductor device, at least a portion of each of first and second leads is exposed from a lower surface of the sealing portion. End surfaces of the first and second leads as the respective cut surfaces thereof are exposed from each of side surfaces of the sealing portion as the cut surfaces of the resin sealing portion. The distance between a lower side of the end surface of the first lead and an upper surface of the sealing portion is smaller than the distance between an upper side of the end surface of the second lead adjacent thereto and the upper surface of the sealing portion.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.