Patent classifications
H01L2924/09701
Integrated circuit package including miniature antenna
The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180° (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115°, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.
Flip chip cavity package
A process for forming a semiconductor package. The process comprises forming a first leadframe strip mounted upon an adhesive tape. The first leadframe strip is at least partially encased in a first mold compound thereby forming a molded leadframe strip. At least one flip chip semiconductor device is mounted on the molded leadframe strip. The semiconductor device has conductive masses attached thereon to effectuate electrical contact between the semiconductor device and the molded leadframe. The conductive masses can be substantially spherical or cylindrical. Liquid encapsulant is dispensed on the semiconductor device to encapsulate the flip chip semiconductor device. A cavity is formed between the semiconductor device and the molded leadframe. The molded leadframe strip, the semiconductor device, and the conductive masses are at least partially encased in a second mold compound. The second mold compound can be molded so that a surface of the flip chip semiconductor device that is not attached to the molded leadframe is substantially exposed or molded to produce a globular form on the flip chip semiconductor device. The molded leadframe strip is singulated to form discrete semiconductor packages.
Methods of Manufacturing An Integrated Circuit Having Stress Tuning Layer
Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.
Illumination apparatus
An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.
SEMICONDUCTOR DEVICE WITH FUSE AND ANTI-FUSE STRUCTURES AND METHOD FOR FORMING THE SAME
The present disclosure provides a semiconductor device with a fuse structure and an anti-fuse structure and a method for forming the semiconductor device. The semiconductor device includes a first dielectric layer disposed over a semiconductor substrate, and a first electrode disposed over the first dielectric layer. The semiconductor device also includes a fuse link disposed over the first electrode, and a second electrode disposed over the fuse link. The semiconductor device further includes a third electrode disposed adjacent to the first electrode, and a second dielectric layer separating the first electrode from the first dielectric layer and the third electrode. The first electrode, the fuse link, and the second electrode form a fuse structure, and the first electrode, the third electrode, and a portion of the second dielectric layer between the first electrode and the third electrode form an anti-fuse structure.
Power electronics module
A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.
Illumination apparatus
An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.
Semiconductor device with fuse and anti-fuse structures and method for forming the same
The present disclosure provides a semiconductor device with a fuse structure and an anti-fuse structure and a method for forming the semiconductor device. The semiconductor device includes a first dielectric layer disposed over a semiconductor substrate, and a first electrode disposed over the first dielectric layer. The semiconductor device also includes a fuse link disposed over the first electrode, and a second electrode disposed over the fuse link. The semiconductor device further includes a third electrode disposed adjacent to the first electrode, and a second dielectric layer separating the first electrode from the first dielectric layer and the third electrode. The first electrode, the fuse link, and the second electrode form a fuse structure, and the first electrode, the third electrode, and a portion of the second dielectric layer between the first electrode and the third electrode form an anti-fuse structure.
Ceramic composite and production method for ceramic composite
To provide a ceramic composite and a production method therefor allowing ease of processing to be improved and fracture toughness to be improved simultaneously. The invention includes the steps of: preparing at least a liquid-form resin and a ceramic sintered body which has been sintered at a temperature which is 700° C. to 100° C. less than a sintering temperature at which a theoretical density is obtained; immersing the ceramic sintered body in the liquid-form resin, causing the liquid-form resin to infiltrate the ceramic sintered body; and hardening the infiltrated liquid-form resin to obtain a ceramic composite having a relative density of between 40% and 90% by causing the resin to infiltrate. Gaps where no resin has infiltrated are formed in the ceramic composite.
Secure smart node and data concentrator for distributed engine control
A system is provided for interfacing a Full Authority Digital Engine Control (FADEC) system with engine sensors and actuators using miniaturized Low Temperature Co-fired Ceramic (LTCC) substrates operating as smart notes that communicate digitally over a data bus to a miniaturized LTCC operating as a data concentrator. The use of smart nodes and/or data concentrators assembled on LTCC substrates provides enhanced thermal and vibration performance along with resistance to hydration, improved reliability and reduced overall size of the circuitry unit.