Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

The present invention relates generally to flip chip technology and more particularly, to a method and structure for reducing internal packaging stresses, improving adhesion properties, and reducing thermal resistance in flip chip packages by using more than one underfill material deposited in different regions of the flip chip interface. According to one embodiment, a method of forming a first underfill in an interior region of an interface such that a periphery region of the interface remains open, and forming a second underfill in the periphery region is disclosed.

In a capacitor, a width in a length direction of a first portion of a third outer electrode, which is a portion located on a first side surface, is greater than a width in a length direction of a second portion of the third outer electrode, which is a portion located on a first main surface. The first portion of the third outer electrode does not extend to first and second end surfaces.

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

A semiconductor element is provided with a micro-structured metal oxide layer over a conductive feature at a hybrid bonding surface. The micro-structured metal oxide layer comprises fine metal oxide grains, such as nanograins. The grains can be formed over the conductive feature by oxidizing a metal comprised in the conductive feature, or by providing a metal oxide over the conductive feature. When directly bonded to another element, the micro-structured metal oxide layer can form strong bonds at the bonding interface at substantially reduced annealing temperature.

A substrate structure and a manufacturing method thereof are provided, in which a substrate body including a dielectric layer and a circuit layer formed on the dielectric layer is provided with a first insulating layer thereon, and a second insulating layer is further provided on the first insulating layer, and a mark is arranged on the second insulating layer. In this way, the arrangement of the mark will not affect wiring space of the circuit layer of the substrate body, and it will not be interfered by the circuit layer when reading the mark, thereby improving the reading success rate.

A lead frame and a stack package module including the same are provided. The lead frame including a lower-end coupling portion coupled to a lower package through soldering, and an upper-end connecting portion contacting a side surface groove formed in a side surface of an upper package to support the upper package.

In embodiments herein, a surface finish (SF) is formed on conductive contacts of a package substrate for connection to an embedded interconnect bridge circuitry die. In some embodiments, the SF may be electroless nickel-electroless palladium-immersion gold (ENEPIG). In other embodiments, the SF may be immersion gold-electroless palladium-immersion gold (IGEPIG). In other embodiments, the SF may include a layer of electrolytic palladium-gold on a layer of indium or on a layer of cobalt-iron.

A semiconductor package includes a package substrate including an insulating layer, an interconnection circuit, and upper pads and lower pads electrically connected through the interconnection circuit, a plurality of semiconductor chips stacked including connection pads, a support structure contacting a side surface of a first semiconductor chip, which is an uppermost one among the plurality of semiconductor chips and at least a portion of an upper surface of a second semiconductor chip, which is one among the plurality of semiconductor chips below the first semiconductor chip, a first connection structure connecting the upper pads of the package substrate to the connection pads of the second semiconductor chip, a second connection structure connecting the connection pads of the first semiconductor chip to the connection pads of the second semiconductor chip, and an encapsulant covering the plurality of semiconductor chips, the first connection structure, and the second connection structure.

Integrated circuit (IC) packages employing a re-distribution layer (RDL) substrate(s) with photosensitive non-polymer dielectric material layers for increased package rigidity, and related fabrication methods. To reduce or minimize warpage of an IC package employing a RDL substrate, the RDLs of the RDL substrate are photosensitive non-polymer dielectric material layers. The photosensitive non-polymer dielectric material layers can exhibit increased rigidity as a result of being hardened when exposed to light and cured during fabrication of the RDL substrate. The photosensitive non-polymer dielectric material layers can also exhibit increased rigidity as a result of being an inorganic polymer (e.g., SiOx, SiN material) that has a higher material modulus for increased stiffness and/or a lower coefficient of thermal expansion (CTE) for reduced thermal contraction and expansion, as opposed to for example, an organic polymer material (e.g., Polyimide) which has less stiffness and a higher CTE.