Patent classifications
H01L2924/163
DAM FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT
An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.
Electromagnetic wave shielding structure and manufacturing method therefor
Disclosed is an electromagnetic wave shielding structure. The electromagnetic wave shielding structure comprises: a printed circuit board having a plurality of elements mounted therein and having a ground pad surrounding the plurality of elements; an insulation member made of a pre-molded insulating material and attached to the printed circuit board to surround the plurality of elements; and a conductive coating layer covering an exterior surface of the insulation member, wherein the conductive coating layer is connected to the ground pad.
SOLID STATE THERMOELECTRIC COOLER IN SILICON BACKEND LAYERS FOR FAST COOLING IN TURBO SCENARIOS
Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.
OPTICAL DEVICE PACKAGE
An optical device package comprises a carrier having a first surface and a second surface recessed with respect to the first surface and a lid disposed on the second surface of the carrier.
Hexagonally arranged connection patterns for high-density device packaging
Hexagonally arranged connection patterns for device packaging allow high density circuitry dies to be assembled into packages of manufacturable size. The connection patterns may be patterns for solder ball arrays or other types of connection mechanisms under a semiconductor package. Despite the increased density of the connection patterns, the connection patterns meet the demanding crosstalk specifications for high speed operation of the high density circuitry.
COATING METHOD, COATING APPARATUS AND METHOD FOR MANUFACTURING COMPONENT
The present disclosure provides a coating method for suppressing variations in a coating amount, a coating apparatus and a method for manufacturing a component. A coating method is employed, which includes: discharging a coating needle adhering to an adhesive from a nozzle; separating the adhesive into the tip of the coating needle and the nozzle; and adhering the adhesive to a first member. A coating apparatus is employed, which includes: a nozzle which holds the adhesive; a coating needle which is discharged from the nozzle in a state where the adhesive is adhered to the tip; and a control unit which controls moving speed of the coating needle to separate the adhesive into the tip of the coating needle and the nozzle.
Heterogeneous Lid Seal Band for Structural Stability in Multiple Integrated Circuit (IC) Device Modules
An integrated circuit (IC) module includes a carrier and multiple IC devices. A heterogenous seal band connects a lid to the carrier. A perimeter wall of the lid is joined to a low modulus seal band and an inner wall of the lid is joined to a high modulus seal band. The low modulus seal band is located around the perimeter of the lid and a perimeter of the multiple IC devices. The high modulus seal band is located between the multiple IC devices. The low modulus seal band has a low resistance to being deformed elastically and the high modulus seal band has a high resistance to being deformed elastically. The low modulus seal band allows for dimensional fluctuations between the lid and carrier. The high modulus seal band allows for adequate joining of the lid and the carrier with relatively less seal band material.
Semiconductor device, and method of manufacturing the same
A semiconductor device includes a substrate, a semiconductor element, a ground pad, an insulating coating member, a conductive bonding member, and a conductive cap. The inner peripheral end of a bottom of the conductive cap is disposed at a side close to the inner periphery of the insulating coating member relative to the outer peripheral end of the insulating coating member. The bottom has a shape in which the distance between the main surface and itself decreases continuously from its outer peripheral end toward its inner peripheral end.
Selective Soldering with Photonic Soldering Technology
Electronic assembly methods and structures are described. In an embodiment, an electronic assembly method includes bringing together an electronic component and a routing substrate, and directing a large area photonic soldering light pulse toward the electronic component to bond the electronic component to the routing substrate.
THERMAL MANAGEMENT IN INTEGRATED CIRCUIT PACKAGES
Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.