Embodiments of the invention include a dye and pry process for removing quad flat no-lead (QFN) packages and bottom termination components (BTC) from card assemblies. Aspects of the invention include immersing a semiconductor package assembly in a solution comprising dye and placing the immersed semiconductor package assembly under vacuum pressure. Vacuum conditions ensure that the dye solution is pulled into any cracks in the solder formed between the semiconductor package assembly and the QFN package or BTC. The package assembly is dried and a hole is drilled to expose a bottom surface of the QFN package or BTC. The QFN package or BTC is then removed by applying a force to the exposed bottom surface. The semiconductor package assembly can then be inspected for the dye to locate cracks.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

Embodiments of the invention include a dye and pry process for removing quad flat no-lead (QFN) packages and bottom termination components (BTC) from card assemblies. Aspects of the invention include immersing a semiconductor package assembly in a solution comprising dye and placing the immersed semiconductor package assembly under vacuum pressure. Vacuum conditions ensure that the dye solution is pulled into any cracks in the solder formed between the semiconductor package assembly and the QFN package or BTC. The package assembly is dried and a hole is drilled to expose a bottom surface of the QFN package or BTC. The QFN package or BTC is then removed by applying a force to the exposed bottom surface. The semiconductor package assembly can then be inspected for the dye to locate cracks.

Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

A method and structure for joining a semiconductor device and a laminate substrate or two laminate substrates where the joint is formed with lead free solders and lead free compositions. The various lead free solders and lead free compositions are chosen so that there is a sufficient difference in liquidus temperatures such that some components may be joined to, or removed from, the laminate substrate without disturbing other components on the laminate substrate.

A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 ?m.