A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.

A means that exhibits excellent heat resistance and mounting reliability when bonding a power semiconductor device on to a metal lead frame, which is also lead-free and places little burden on the environment. Specifically, provided is an electrically conductive adhesive film, which includes metal particles, a thermosetting resin, and a compound having Lewis acidity or a thermal acid generator, wherein the compound having Lewis acidity or thermal acid generator is selected from: boron fluoride or a complex thereof, a protonic acid with a pKa value of 0.4 or lower, or a salt or acid obtained by combining an anion that is the same as the salt thereof with hydrogen ion or any other cation. Further, the present invention provides a dicing die bonding film that is obtained by bonding the electrically conductive adhesive film with a pressure-sensitive adhesive tape.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.

An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.

A process of forming an electronic device includes providing a wire comprising a first ball at an end thereof, operating on the first ball to modify a surface of the first ball to form a modified surface, moving the first ball to a first location on a die, and bonding the first ball along the modified surface to the first location of the die. In an embodiment, the process further includes moving a bonding tool including the wire away from the die while the wire remains bonded to the die.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.