A thermal interface material (TIM) and method for manufacture is disclosed. A vertically aligned carbon nanotube (VACNT) array is formed on a substrate, then individual CNTs are cleaved to form a vertical nanoribbon array (VERNA). An array of aligned, upright, flat, highly-compliant ribbon elements permit a higher packing density, better ribbon-to-ribbon engagement factor, better contact with adjoining surfaces and potentially achievement of theoretical thermal conductance limit (1 GW/m2K) for such nanostructured polycyclic carbon materials. Methods for forming the VERNA include either or both of electrochemical and gas phase processing steps.

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

A thermal interface material (TIM) and method for manufacture is disclosed. A vertically aligned carbon nanotube (VACNT) array is formed on a substrate, then individual CNTs are cleaved to form a vertical nanoribbon array (VERNA). An array of aligned, upright, flat, highly-compliant ribbon elements permit a higher packing density, better ribbon-to-ribbon engagement factor, better contact with adjoining surfaces and potentially achievement of theoretical thermal conductance limit (1 GW/m2K) for such nanostructured polycyclic carbon materials. Methods for forming the VERNA include either or both of electrochemical and gas phase processing steps.

A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

A means that exhibits excellent heat resistance and mounting reliability when bonding a power semiconductor device on to a metal lead frame, which is also lead-free and places little burden on the environment. Specifically, an electrically conductive adhesive film, which includes metal particles, a thermosetting resin, and a compound having Lewis acidity or a thermal acid generator, wherein the compound having Lewis acidity or thermal acid generator is selected from: boron fluoride or a complex thereof, a protonic acid with a pKa value of 0.4 or lower, or a salt or acid obtained by combining an anion that is the same as the salt thereof with hydrogen ion or any other cation. Further, a dicing die bonding film that is obtained by bonding the electrically conductive adhesive film with a pressure-sensitive adhesive tape.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 ?m.

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

A method of determining curing conditions is for determining the curing conditions of a thermosetting resin to seal a conductive part between a substrate and an electronic component. A curing degree curve is created. The curing degree curve indicates, with respect to each of heating temperatures, relationship between heating time and curing degree of the thermosetting resin. On the basis of the created curing degree curve, a void removal time of a void naturally moving upward in the thermosetting resin, at a first heating temperature, is calculated. The first heating temperature is one of the heating temperatures.