An antenna substrate includes: a first insulating layer surrounding a cavity; a second insulating layer of which at least a portion is disposed in the cavity and containing an insulating material different from an insulating material of the first insulating layer; a first patch antenna having one surface facing the first insulating layer by an amount greater than half of an area of the first patch antenna; and a second patch antenna having one surface facing the cavity by an amount greater than half of an area of the second patch antenna.

A power amplifier module includes a module substrate. First and second heat dissipation structures extend through the module substrate, and each has a first surface exposed at a mounting surface of the module substrate, and a second surface exposed at a bottom surface of the module substrate. The first surfaces of the first and second heat dissipation structures are physically separated by a portion of the mounting surface. First and second amplifier dies are coupled to the first surface of the first heat dissipation structure. The first amplifier die includes a first power transistor that functions as a driver amplifier. The second amplifier die includes a second power transistor that functions as a first final amplifier. The third amplifier die is coupled to the first surface of the second heat dissipation structure, and the third amplifier die includes a third power transistor that functions as a second final amplifier.

An electronic package is provided, in which a plurality of antenna structures and a heat sink are integrated on a package module including an electronic element, so as to guide the heat energy generated by the electronic element out of the package module via the heat sink. Therefore, when the electronic package is configured with the plurality of antenna structures, the heat dissipation of the electronic element can be improved.

A semiconductor package includes; a package substrate, a semiconductor chip on the package substrate, an electromagnetic shield structure on the package substrate and including an upper cover covering an upper surface of the semiconductor chip and a side cover surrounding the semiconductor chip, and a sealing member contacting the semiconductor chip and the electromagnetic shield structure, wherein the side cover includes first through holes and the upper cover includes second through holes.

A Doherty amplifier includes first and second input terminals, first and second amplifiers, and an output combiner circuit. The first amplifier includes a first amplifier input coupled to the first input terminal, and a first amplifier output. The second amplifier includes a second amplifier input coupled to the second input terminal, and a second amplifier output. The output combiner circuit is coupled between the first amplifier output, the second amplifier output, and a final summing node. The output combiner circuit includes a first inductive element, a first capacitor integrated within an integrated passive device (IPD), and a second inductive element. The first inductive element is coupled between the first amplifier output and a first terminal of the first capacitor, and the second inductive element is coupled between a combining node and the first terminal of the first capacitor. A second terminal of the first capacitor is coupled to ground.

A semiconductor device has an antenna substrate and a component module disposed over the antenna substrate. The component module includes an electrical component, and a conductive structure formed around the electrical component. Alternatively, an electrical component can be disposed over the antenna substrate, and a conductive structure is disposed over the antenna substrate and around the electrical component. An encapsulant is deposited around the electrical component and conductive structure. A shielding material is formed over the component module, and a heat sink formed over the component module. The shielding material can be formed over the component module, while the heat sink is formed over the shielding material. Alternatively, the heat sink is formed over the component module, while the shielding material is formed over the heat sink. The conductive structure has a plurality of posts or a frame. A thermal interface material is disposed over the component module.

In a described example, an apparatus includes: a semiconductor device mounted to a device side surface of a package substrate, the package substrate having a board side surface opposite the device side surface; an antenna module mounted to the package substrate and coupled to the semiconductor device; and mold compound covering the semiconductor device and a portion of the package substrate.

A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second substrate and a second electronic component. The first electronic component is disposed over a first through hole of the first substrate. The first electronic component is electrically connected to a first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole. The second electronic component is disposed over a second through hole of the second substrate. The second electronic component is electrically connected to a second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole.

A semiconductor package includes a base film, a semiconductor die on the base film, metal studs on the semiconductor die, shielding pillars on the base film and around the semiconductor die, a first molding compound encapsulating the semiconductor die, the metal studs, and the shielding pillars, a first re-distribution structure on the first molding compound, a second molding compound on the first re-distribution structure, through-mold-vias in the second molding compound, and a second re-distribution structure on the second molding compound and electrically connected to the through-mold-vias. The second re-distribution structure comprises an antenna.

A semiconductor device has an antenna substrate and a component module disposed over the antenna substrate. The component module includes an electrical component, and a conductive structure formed around the electrical component. Alternatively, an electrical component can be disposed over the antenna substrate, and a conductive structure is disposed over the antenna substrate and around the electrical component. An encapsulant is deposited around the electrical component and conductive structure. A shielding material is formed over the component module, and a heat sink formed over the component module. The shielding material can be formed over the component module, while the heat sink is formed over the shielding material. Alternatively, the heat sink is formed over the component module, while the shielding material is formed over the heat sink. The conductive structure has a plurality of posts or a frame. A thermal interface material is disposed over the component module.