A semiconductor device in which reliability of a bonding pad to which a conductive wire is bonded is achieved. A bonding pad having an OPM structure is formed of an AlCu alloy film having a Cu concentration of 2 wt % or more. By increasing the Cu concentration, the AlCu alloy film forming the bonding pad is hardened. Therefore, the bonding pad is difficult to be deformed by impact in bonding of a Cu wire, and deformation of an OPM film as following the deformation of the bonding pad can be reduced. In this manner, concentration of a stress on the OPM film caused by the impact from the Cu wire can be reduced, and therefore, the breakage of the OPM film can be prevented.

A semiconductor device in which reliability of a bonding pad to which a conductive wire is bonded is achieved. A bonding pad having an OPM structure is formed of an AlCu alloy film having a Cu concentration of 2 wt % or more. By increasing the Cu concentration, the AlCu alloy film forming the bonding pad is hardened. Therefore, the bonding pad is difficult to be deformed by impact in bonding of a Cu wire, and deformation of an OPM film as following the deformation of the bonding pad can be reduced. In this manner, concentration of a stress on the OPM film caused by the impact from the Cu wire can be reduced, and therefore, the breakage of the OPM film can be prevented.