The present disclosure describes a structure with a controlled polyimide profile and a method for forming such a structure. The method includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.

A wire bonding tool includes a tool body with a tubular cavity extending through the tool body and a distal end. The distal end includes a flared opening at an end of the tubular cavity. The tool body further includes at least one protrusion at a level of the distal end.

A wire bonding tool includes a tool body with a tubular cavity extending through the tool body and a distal end. The distal end includes a flared opening at an end of the tubular cavity. The tool body further includes at least one protrusion at a level of the distal end.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A method of packaging a semiconductor device includes: bonding a ball at an end of a bond wire to a bond pad of a semiconductor device die in an aperture of a shielding layer of the semiconductor device; and sealing the part of the bond pad exposed by the aperture of the shielding layer by deforming the ball of the bond wire to fill the aperture of the shielding layer. The aperture of the shielding layer includes an edge wall, and exposes a part of the bond pad. The shielding layer covers a remaining part of the bond pad. The aperture of the shielding layer is completely filled with the ball of the bond wire, thereby deforming the edge wall of the shielding layer.

A method of packaging a semiconductor device includes: bonding a ball at an end of a bond wire to a bond pad of a semiconductor device die in an aperture of a shielding layer of the semiconductor device; and sealing the part of the bond pad exposed by the aperture of the shielding layer by deforming the ball of the bond wire to fill the aperture of the shielding layer. The aperture of the shielding layer includes an edge wall, and exposes a part of the bond pad. The shielding layer covers a remaining part of the bond pad. The aperture of the shielding layer is completely filled with the ball of the bond wire, thereby deforming the edge wall of the shielding layer.

There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu.sub.2O, CuO and Cu(OH).sub.2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH).sub.2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu.sub.2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.

There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu.sub.2O, CuO and Cu(OH).sub.2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH).sub.2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu.sub.2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy

[00001]$0.05\le \text{x}1\le 3.0,\text{and}$

[00002]$15\le \text{x}2\le 700$

where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.