A bonding wire and a method of manufacturing the bonding wire are provided. The bonding wire contains 90.0 to 99.0 wt % of silver (Ag); 0.2 to 2.0 wt % of gold (Au); 0.2 to 4.0 wt % of palladium (Pd), platinum (Pt), rhodium (Rh), or a combination thereof; 10 to 1000 ppm of dopants; and inevitable impurities. In the wire, the ratio of (a)/(b) is 3 to 5, in which (a) represents the amount of crystal grains having <100> orientation in crystalline orientations <hkl> in a wire lengthwise direction and (b) represents the amount of crystal grains having <111> orientation in crystalline orientations <hkl> in the wire lengthwise direction.

An integrated circuit lead frame and a semiconductor device thereof are provided. The integrated circuit lead frame includes a die pad and a plurality of leads. The die pad is provided to attach a die. The plurality of leads are provided for connection to the die through wire bonding. The leads include a pair of a first lead and a second lead. The first lead includes a first body and a first extension portion connected to the first body. The second lead includes a second body and a second extension portion connected to the second body. The first extension portion and the second extension portion extend in directions toward each other.

An integrated circuit lead frame and a semiconductor device thereof are provided. The integrated circuit lead frame includes a die pad and a plurality of leads. The die pad is provided to attach a die. The plurality of leads are provided for connection to the die through wire bonding. The leads include a pair of a first lead and a second lead. The first lead includes a first body and a first extension portion connected to the first body. The second lead includes a second body and a second extension portion connected to the second body. The first extension portion and the second extension portion extend in directions toward each other.

An electronic package includes an electronic component including terminals, a plurality of surface contacts, at least some of the surface contacts being electrically coupled to the terminals within the electronic package, a mold compound covering the electronic component and partially covering the surface contacts with a bottom surface exposed from the mold compound, and a plurality of wires extending from exposed surfaces of the surface contacts, each of the wires providing a solderable surface for mounting the electronic package at a standoff on an external board.

An electronic package includes an electronic component including terminals, a plurality of surface contacts, at least some of the surface contacts being electrically coupled to the terminals within the electronic package, a mold compound covering the electronic component and partially covering the surface contacts with a bottom surface exposed from the mold compound, and a plurality of wires extending from exposed surfaces of the surface contacts, each of the wires providing a solderable surface for mounting the electronic package at a standoff on an external board.

A semiconductor device is disclosed including a wire bonded die stack where the bond wires skip dies in the die stack to provide bond wires having a long length. In one example, the semiconductor dies are stacked on top of each other with offsets along two orthogonal axes so that the dies include odd numbered dies interspersed and staggered with respect to even numbered dies only one of the axes. Wire bonds may be formed between the odd numbered dies, skipping the even numbered dies, and wire bonds may be formed between the even numbered dies, skipping the odd numbered dies. The long length of the bond wires increases an inductance of the wire bonds relative to parasitic capacitance of the semiconductor dies, thereby increasing signal path bandwidth of the semiconductor device.

A semiconductor device is disclosed including a wire bonded die stack where the bond wires skip dies in the die stack to provide bond wires having a long length. In one example, the semiconductor dies are stacked on top of each other with offsets along two orthogonal axes so that the dies include odd numbered dies interspersed and staggered with respect to even numbered dies only one of the axes. Wire bonds may be formed between the odd numbered dies, skipping the even numbered dies, and wire bonds may be formed between the even numbered dies, skipping the odd numbered dies. The long length of the bond wires increases an inductance of the wire bonds relative to parasitic capacitance of the semiconductor dies, thereby increasing signal path bandwidth of the semiconductor device.

In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.

In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.