A packaging structure is provided, including a substrate, a first chip, a second chip, and a conductive unit. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip by the conductive unit.

A packaging structure is provided, including a substrate, a first chip, a second chip, and a conductive unit. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip by the conductive unit.

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

A microelectronic package includes at least one microelectronic element having a front surface defining a plane, the plane of each microelectronic element parallel to the plane of any other microelectronic element. An encapsulation region overlying edge surfaces of each microelectronic element has first and second major surfaces substantially parallel to the plane of each microelectronic element and peripheral surfaces between the major surfaces. Wire bonds are electrically coupled with one or more first package contacts at the first major surface of the encapsulation region, each wire bond having a portion contacted and surrounded by the encapsulation region. Second package contacts at an interconnect surface being one or more of the second major surface and the peripheral surfaces include portions of the wire bonds at such surface, and/or electrically conductive structure electrically coupled with the wire bonds.

A microelectronic package includes at least one microelectronic element having a front surface defining a plane, the plane of each microelectronic element parallel to the plane of any other microelectronic element. An encapsulation region overlying edge surfaces of each microelectronic element has first and second major surfaces substantially parallel to the plane of each microelectronic element and peripheral surfaces between the major surfaces. Wire bonds are electrically coupled with one or more first package contacts at the first major surface of the encapsulation region, each wire bond having a portion contacted and surrounded by the encapsulation region. Second package contacts at an interconnect surface being one or more of the second major surface and the peripheral surfaces include portions of the wire bonds at such surface, and/or electrically conductive structure electrically coupled with the wire bonds.

A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 μm or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 μm or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.