A header for a semiconductor package, includes an eyelet having a first surface, a second surface opposite to the first surface, a side surface, and a through hole penetrating the eyelet from the first surface to the second surface, a lead inserted through the through hole, and a metal base bonded to the second surface of the eyelet. The lead is bent at the second surface of the eyelet and protrudes from the side surface of the eyelet in a plan view. The metal base is spaced apart from the lead. The lead, located at a position overlapping the eyelet in the plan view, is disposed within a thickness range of the metal base in a side view.

An electronic-element mounting package includes a wiring substrate having a first surface and a wiring pattern thereon; a base having a second surface and a through hole whose opening is on the second surface; a signal line penetrating the through hole and having a first end exposed from an opening of the through hole; and an insulating member between an inner surface of the through hole and the signal line and has an end portion and a main portion. The end portion has an end surface on a side of the opening of the through hole, and the main portion is farther from the opening of the through hole than the end portion. The electronic-element mounting package also has a conductive joining material with which the wiring pattern and the first end are joined. Permittivity of the end portion is larger than permittivity of the main portion.

A semiconductor device including: a first silicon level including a first single crystal silicon layer and a plurality of first transistors; a first metal layer disposed over the first silicon level; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 40 nm alignment error; a via disposed through the second level, where each of the second transistors includes a metal gate, where a typical thickness of the second metal layer is greater than a typical thickness of the third metal layer by at least 50%.

Shielded extremely high frequency (EHF) connector assemblies are disclosed herein. In some embodiments, a first extremely high frequency (EHF) shielded connector assembly configured to be coupled with a second EHF shielded connector assembly. The first EHF connector assembly can include a first EHF communication unit operative to contactlessly communicate EHF signals with a second EHF communication unit included in the second EHF shielded connector assembly. The first connector can include a connector interface that includes a configuration to interface with a respective connector interface of the second EHF shield connector assembly, and several different material compositions that, in conjunction with the configuration, provide shielding to prevent or substantially reduce EHF signal leakage when the first EHF assembly connector is coupled to the second EHF assembly connector and the first EHF communication unit is contactlessly communicating EHF signals with the second EHF communication unit.

Shielded extremely high frequency (EHF) connector assemblies are disclosed herein. In some embodiments, a first extremely high frequency (EHF) shielded connector assembly configured to be coupled with a second EHF shielded connector assembly. The first EHF connector assembly can include a first EHF communication unit operative to contactlessly communicate EHF signals with a second EHF communication unit included in the second EHF shielded connector assembly. The first connector can include a connector interface that includes a configuration to interface with a respective connector interface of the second EHF shield connector assembly, and several different material compositions that, in conjunction with the configuration, provide shielding to prevent or substantially reduce EHF signal leakage when the first EHF assembly connector is coupled to the second EHF assembly connector and the first EHF communication unit is contactlessly communicating EHF signals with the second EHF communication unit.

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad, a plurality of leads including a power lead disposed along a peripheral edge of the die pad, at least one connecting bar connecting the die pad, a power bar disposed on one side of the connecting bar, and a surface mount device (SMD) having a first terminal and a second terminal. The first terminal is electrically connected to the ground level through a first bond wire. The second terminal is electrically connected a power level through a second bond wire.

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad, a plurality of leads including a power lead disposed along a peripheral edge of the die pad, at least one connecting bar connecting the die pad, a power bar disposed on one side of the connecting bar, and a surface mount device (SMD) having a first terminal and a second terminal. The first terminal is electrically connected to the ground level through a first bond wire. The second terminal is electrically connected a power level through a second bond wire.

Methods and apparatus for providing an assembly including a base substrate, a lid substrate, and a ring frame between the base substrate and the lid substrate to define a protected volume, where the ring frame includes through vias. A die may be contained in the protected volume. Sensor circuitry can include conductive pillars in the protected volume and the die can include circuity to determine an impedance of the pad and the pillars for tamper detection. An edge cap can be coupled to at least one side of the assembly for tamper detection.

The present disclosure provides a semiconductor structure including a first substrate having a first surface, a first semiconductor device package disposed on the first surface of the first substrate, and a second semiconductor device package disposed on the first surface of the first substrate. The first semiconductor device package and the second semiconductor device package have a first signal transmission path through the first substrate and a second signal transmission path insulated from the first substrate. The present disclosure also provides an electronic device.

Various aspects of the present disclosure are directed toward methods and apparatus that include a lead frame with a fixed external pin pitch. A differential signal path is provided that is characterized by bond-pad pitch range, wire length and wire diameter. The differential signal path carries signals in a frequency range between 5 GHz and 16.1 GHz with less than about 25 dB differential return loss (DDRL). Further, the signals are processed at a signal-processing node that is electrically coupled to the differential signal path by using the differential signal path to carry signals in a frequency range between 5 GHz and about 16.1 GHz.