A chip transfer apparatus includes: a chip storage module in which a plurality of micro-semiconductor chips and a suspension including impurities are stored; a chip filtration module separating a first suspension including the plurality of micro-semiconductor chips and a second suspension including the impurities in the suspension; and a chip supply module configured to supply the first suspension onto the transfer substrate such that the first suspension is introduced from the chip filtration module and the plurality of micro-semiconductor chips are flowable on the transfer substrate.

The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention - selects one power semiconductor among the power semiconductors connected in parallel according to a criterion. - applies a same input patient to the not selected power semiconductors connected in parallel. - increases the temperature of the selected power semiconductor in order to reach a target temperature of tlic power semicon- ductor dunng a time duration m order to achieve and interface grain homogenisation of the metallic connections of tlic selected power semiconductor. - applies the same input pattern to tlic selected pow er semiconductor after tlic time duration.

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a semiconductor device is disclosed. The semiconductor device includes a first semiconductor die having a first bonding surface that is formed with a first set of contacts patterned with a first connection pitch. A second semiconductor die has a second bonding surface that is formed with a second set of contacts patterned with a second connection pitch. The second set of contacts are further patterned with a paired offset. The second semiconductor die is bonded to the first semiconductor die such that the first set of contacts is disposed in opposed electrical engagement with at least a portion of the second set of contacts.

A semiconductor package includes a semiconductor element, a wiring structure, an encapsulation structure, and a solder ball. The semiconductor element includes a plurality of pins. A side of the wiring structure is electrically connected to the plurality of pins of the semiconductor element. The wiring structure includes at least two first wiring layers. A first insulating layer is disposed between adjacent two first wiring layers of the at least two first wiring layers. The first insulating layer includes a plurality of first through-holes. The adjacent two first wiring layers are electrically connected to each other through the plurality of first through-holes. The encapsulation structure at least partially surrounds the semiconductor element. The solder ball is located on a side of the wiring structure away from the semiconductor element. The solder ball is electrically connected to the at least two first wiring layers.

A package structure includes a metal layer, a composite layer of a non-conductor inorganic material and an organic material, a sealant, a chip, a circuit layer structure, and an insulating protective layer. The composite layer of the non-conductor inorganic material and the organic material is disposed on the metal layer. The sealant is bonded on the composite layer of the non-conductor inorganic material and the organic material. The chip is embedded in the sealant, and the chip has electrode pads. The circuit layer structure is formed on the sealant and the chip. The circuit layer structure includes at least one dielectric layer and at least one circuit layer. The dielectric layer has conductive blind holes. The insulating protective layer is formed on the circuit layer structure. The insulating protective layer has openings, so as to expose parts of the surface of the circuit layer structure in the openings.

A fan-out semiconductor package includes: a first connection member having a through-hole; a semiconductor chip disposed in the through-hole of the first connection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first connection member and the inactive surface of the semiconductor chip; and a second connection member disposed on the first connection member and the active surface of the semiconductor chip. The first connection member and the second connection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, and the first connection member includes a coil pattern layer electrically connected to the connection pads of the semiconductor chip.

A semiconductor device includes a first chip, a spacer, and a second chip. The first chip and the spacer are disposed on a substrate. The second chip has a first half end portion disposed on a first half end portion of the first chip, and a second half end portion disposed on the spacer. The height of the spacer is substantially equal to the height of the first chip.

The present disclosure discloses a trench Insulated Gate Bipolar Transistor (IGBT) packaging structure and a method for manufacturing the trench Insulated Gate Bipolar Transistor packaging structure. The trench IGBT packaging structure includes: a trench IGBT, which includes an emitting electrode metal layer, and a trench gate electrode; a lead frame, which includes a chip placement area and an emitting electrode lead-out end; a first bonding wire connecting the emitting electrode metal layer and an emitting electrode pin. One end of the first bonding wire is connected to a surface, away from the trench gate electrode, of the emitting electrode metal layer to form a strip-shaped first solder joint, the other end is connected to the emitting electrode lead-out end to form a second solder joint, and an extension direction of the first solder joint is perpendicular to an extension direction of the trench of the trench gate electrode.

A bonding apparatus comprises a chip holding part that disposes a chip part onto a substrate that has been placed on a substrate stage. The bonding apparatus adjusts the inclination of a chip holding surface that releasably holds the chip part. The bonding apparatus comprises: an adjustment controller which stores inclination information pertaining to inclination respectively for locations on a stage main surface having the substrate placed thereon; and a conforming jig which has a conforming surface onto which the chip holding surface is pressed, and in which the inclination of the conforming surface can be changed such that the inclination of the chip holding surface corresponds to the inclination indicated by the inclination information.

A chip packaging structure and a method for preparing the same, and a method for packaging a semiconductor structure are provided, which relate to the technical field of semiconductors, and solve the technical problem of low yield of a chip. The chip packaging structure includes: a chip, an intermediate insulating layer arranged on the chip and a non-conductive adhesive layer arranged on the intermediate insulating layer, where a plurality of conductive pillar bumps are arranged on the chip, and each conductive pillar bump penetrates through the intermediate insulating layer; the intermediate insulating layer is provided with at least one group of holding holes, and the non-conductive adhesive layer fills the holding holes, so that grooves respectively matched with the holding holes are formed in a surface, far away from the intermediate insulating layer, of the non-conductive adhesive layer.