The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.

The present disclosure, in some embodiments, relates to a bump structure. The bump structure includes a conductive layer and a solder layer. The solder layer is disposed vertically below and laterally between portions of the conductive layer along a cross-section. The conductive layer is continuous between the portions.

A flip-chip method includes providing a semiconductor chip and conductive connection pillars. Each of the conductive connection pillars has a first surface and a second surface opposite to the first surface. The flip-chip method also includes fixing the conductive connection pillars on a surface of the semiconductor chip. The first surfaces face the semiconductor chip. The flip-chip method also includes providing a carrier plate, forming solder pillars on the carrier plate, and forming a barrier layer on the carrier plate around the solder pillars. The flip-chip method further includes bringing the solder pillars into contact with the second surfaces of the conductive connection pillars. The conductive connection pillars are located above the solder pillars. The flip-chip method further includes performing a reflow-soldering process on the solder pillars, thereby forming solder layers from the solder pillars.

A described example includes a package substrate having an array of die pads arranged in rows and columns on a die mount surface, and having an opposing board side surface; a solder mask layer overlying the die mount surface; a first plurality of solder mask defined openings in the solder mask layer at die pad locations, the solder mask defined openings exposing portions of a surface of corresponding die pads, the surface facing away from the package substrate; and at least one non-solder mask defined opening in the solder mask layer at a die pad location, exposing the entire surface of the die pad and sidewalls of the die pad at the non-solder mask defined opening.

A chip structure has a chip body having a plurality of pads, a plurality of metal bumps respectively formed on the pads, and a patterned bump directly formed on the chip body. The patterned bump has at least two different upper and lower plane patterns. A top surface of each of the metal bumps is higher than a height position on which the upper plane pattern is. When the chip structure is ground to the height position, the ground tops of the metal bumps and the upper plane pattern are flush. Therefore, detecting whether the upper plane pattern is exposed determines whether all the metal bumps are exposed and flush to each other to avoid insufficient grinding depth or over-ground.

A method includes receiving a first design for conductive bumps on a first surface of an interposer, the conductive bumps in the first design having a same cross-section area; grouping the conductive bumps in the first design into a first group of conductive bumps in a first region of the first surface and a second group of conductive bumps in a second region of the first surface, where a bump pattern density of the second region is lower than that of the first region; forming a second design by modifying the first design, where modifying the first design includes modifying a cross-section area of the second group of conductive bumps in the second region; and forming the conductive bumps on the first surface of the interposer in accordance with the second design, where after being formed, the first group of conductive bumps and the second group of conductive bumps have different cross-section areas.

A flip-chip method includes providing a semiconductor chip and conductive connection pillars. Each of the conductive connection pillars has a first surface and a second surface opposite to the first surface. The flip-chip method also includes fixing the conductive connection pillars on a surface of the semiconductor chip. The first surfaces face the semiconductor chip. The flip-chip method also includes providing a carrier plate, forming solder pillars on the carrier plate, and forming a barrier layer on the carrier plate around the solder pillars. The flip-chip method further includes bringing the solder pillars into contact with the second surfaces of the conductive connection pillars. The conductive connection pillars are located above the solder pillars. The flip-chip method further includes performing a reflow-soldering process on the solder pillars, thereby forming solder layers from the solder pillars.

A packaging device including bumps and a method of manufacturing the packaging device are presented. In the method of manufacturing a packaging device, a dielectric layer that covers a packaging base is formed and a lower layer is formed over a packaging base including first and second connecting pads. A plurality of dummy bumps that overlaps with the dielectric layer is formed. A sealing pattern that covers the dummy bumps, filling areas between the dummy bumps, is formed. A lower layer pattern in which the plurality of dummy bumps have been disposed is formed by removing portions of the lower layer that are exposed and do not overlap with the sealing pattern.

A semiconductor package includes a first substrate, a first bonding pad on the first substrate, a solder ball on the first bonding pad, and a blocking layer on the solder ball, wherein a thickness of the blocking layer varies in a direction away from the first substrate.

A semiconductor device has a semiconductor substrate, at least one first transistor that has a mesa structure including one or more semiconductor layers, a first bump that overlaps the first transistor and extends in a first direction, and a second bump, in which the mesa structure has a first end portion on one end side in a second direction and a second end portion on the other end side in the second direction. The opening has a first opening end portion and a second opening end portion that are adjacent in the second direction. In plan view, the first opening end portion is closer to the second bump than the second opening end portion and the first end portion and the second end portion of the mesa structure are disposed between the first opening end portion and the second opening end portion.