Patent classifications
H01L2933/0041
LED WITH THERMO-RESPONSIVE BLACK-BODY LINE DIMMING
The invention provides a lighting device (10) comprising a light source (100) configured to generate light source light (101) and a light converter element (200), wherein the light converter element (200) comprises a light transmissive matrix (205), wherein the light transmissive matrix (205) comprises: (i) a first luminescent material (210) configured to convert at least part of one or more of (a) the light source light (101) and (b) optionally a second luminescent material light (221) from an optional second luminescent material (220) into a first luminescent material light (211); and (ii) a thermo-responsive liquid crystalline compound (250); wherein the light transmissive matrix (205) is configured in thermal contact with the light source (100), and wherein the lighting device (10) is further configured to provide lighting device light (11) comprising said light source light (101), said first luminescent material light (210) and optionally said second luminescent material light (221), and wherein said light converter element is arranged for changing one or more of the color and color temperature of the lighting device light with the electrical power provided to the light source.
Display device, display module, electronic device, and manufacturing method of display device
One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.
LIGHT EMITTING DEVICE
A light emitting device includes a light emitting element, a frame, a first light-transmissive member, and a second light-transmissive member. The light emitting element includes an element upper surface from which a light is configured to be emitted, an element bottom surface opposite to the element upper surface, and an element lateral surface connecting the element upper surface and the element bottom surface. The frame is provided to surround the light emitting element to be opposite to the element lateral surface. The first light-transmissive member is provided on the element upper surface and the element lateral surface to contact the frame. The first light-transmissive member covers the element upper surface and the element lateral surface. The second light-transmissive member is provided on the first light-transmissive member.
Light-emitting device and method of manufacturing the light-emitting device
A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.
Back-to-back solid state lighting devices and associated methods
Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM
The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
PANEL AND MANUFACTURING METHOD THEREOF
An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device according to an embodiment of the present invention comprises a color conversion substrate and a color conversion layer which convert light of a first color emitted by an LED to a second color and emit the light in all directions. The present invention can reduce LED transfer processes as the color conversion layer is included, and light-emitting efficiency can be increased by using the side-surface light emitted from the LEDs.
LIGHT EMITTING DEVICE
A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.
Light emitting device, and method for manufacturing thereof
A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.