A package structure includes a substrate, a plurality of conductive pads, a light-emitting diode, a photo imageable dielectric material, and a black matrix. The substrate includes a top surface. The conductive pads are located on the top surface of the substrate. The light-emitting diode is located on the conductive pads. The photo imageable dielectric material is located between the light-emitting diode and the top surface of the substrate and between the conductive pads. An orthogonal projection of the light-emitting diode on the substrate is overlapped with an orthogonal projection of the photo imageable dielectric material on the substrate. The black matrix is located on the top surface of the substrate and the conductive pads.

A backplane, a manufacturing method thereof, a backlight module and a display panel are provided. The backplane includes a base substrate; a first conductive layer located on the base substrate and including a wire; a first protection layer located at a side of the first conductive layer facing away from the base substrate; a second conductive layer located on the first protection layer and including a conductive sub-layer, the conductive sub-layer penetrating the first protection layer to be connected with the wire; a second protection layer located at a side of the second conductive layer facing away from the base substrate; a micro light-emitting diode (LED) penetrating the second protection layer to be connected with the conductive sub-layer; and a metallic reflective layer, located on the second protection layer and configured to reflect light irradiated onto the metallic reflective layer from the micro LED.

A light-emitting module includes a light guide plate including a first surface, and a second surface opposite to the first surface; a light-emitting device disposed at a second surface side of the light guide plate; a first light-reflective member provided at a periphery of the light-emitting device at the second surface side; and a second light-reflective member provided outward of the first light-reflective member at the second surface. A diffuse reflectance of the first light-reflective member for light emitted by the light-emitting device is greater than a diffuse reflectance of the second light-reflective member for the light emitted by the light-emitting device.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

In an embodiment a semiconductor component includes a carrier, at least one semiconductor chip arranged on the carrier, the semiconductor chip having at least one first electrical contact at a main surface of the semiconductor chip facing away from the carrier, an electrically insulating layer arranged on the carrier and at least one electrical connection layer led by the electrically insulating layer to the first electrical contact, wherein the electrically insulating layer includes a photopatternable material.

A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

A light emitting module includes a light guide plate including a first face, a second face opposing the first face, and a through part penetrating between the first face and the second face, a light emitting device disposed in the through part on a second face side, a light transmissive member disposed on the light emitting device in the through hole on a first face side and between the light emitting device and a lateral wall of the through part, and a first light reflecting member disposed between an upper face of the light emitting device and the light transmissive member while being in contact with the upper face of the light emitting device.

A method for manufacturing a light-emitting device includes providing a transparent member having a protrusion formed at an upper surface of the transparent member. A first resin portion is placed on the protrusion in which the first resin portion has a solid form and is made from a first resin material of which the viscosity decreases when heated. A light-emitting element is placed on the first resin portion, the light-emitting element is caused to be self-aligned with respect to the protrusion by reducing a viscosity of the first resin portion by heating to a first temperature. The first resin portion is solidified by cooling.

A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.