A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

A display substrate is provided, which includes a base substrate, a plurality of pixel units arranged on the base substrate, and a function layer arranged at a light-emitting side of at least one pixel unit of the plurality of pixel units, wherein the function layer is configured to shield a light beam toward a first direction among light beams emitted by the at least one pixel unit, the function layer includes an organic layer and a light-shielding layer, and the light-shielding layer is arranged on a part of the organic layer, and configured to shield the light beam toward the first direction among the light beams emitted by the at least one pixel unit. An on-board display device and a method for manufacturing the display substrate are further provided.

A light flux controlling member includes a lens body and a cut part. The lens body and the cut part are an integrally molded article composed of a cured product of a liquid resin composition. The cut part extends outward from the entire circumference of the outer peripheral part of the lens body in plan view of the light flux controlling member. The cut part includes the outward-facing end surface bearing a blade mark or a melting mark. In the front-rear direction of the light flux controlling member, the distance between the bottom surfaces of the cut part and the lens body is 20 μm or more.

The disclosed examples relate to various implementations of a micro-light emitting diode upon which is built a controllable variable optic to provide a chip-scale light emitting device. An example of the controllable variable optic described herein is a controllable electrowetting structure having a leak-proof sealed cell with a first fluid having a first index of refraction and a second fluid having a second index of refraction. The controllable electrowetting structure may be integrally formed on or in a substrate or semiconductor material associated with the micro-light emitting diode in alignment with one or more of the light emitting diodes of the micro-LED device to provide a controllable lighting distribution.

A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

A method of fabricating one or more optoelectronic devices each comprising at least one passive optical component. The method comprises providing a first carrier, depositing a soluble adhesive onto a surface of the first carrier, and placing a plurality of integrated circuit devices onto said surface and curing the soluble adhesive to fix the integrated circuit devices to the carrier. The method further comprises depositing a molding material onto a plurality of molds of a second carrier to form a plurality of said passive optical components, aligning said first and second carriers such that the plurality of passive optical components contact respective zones of the plurality of integrated circuit devices, injecting a polymer compound into a space between said first and second carriers and curing said polymer compound, removing said second carrier to leave the plurality of optical components fixed to the integrated circuit devices by said polymer compound, and dissolving said soluble adhesive to remove the integrated circuit devices, polymer compound and passive optical components from the first carrier to provide a wafer package.

Provided is a light-emitting device including a light-emitting element, and a light-reflective covering member that covers the light-emitting element. The light-reflective covering member includes a light-reflective material having a plate shape, silica, and an alkali metal. The light-reflective material has a mean particle size of a range of 0.6 μm to 43 μm, and the light-reflective material has an average aspect ratio of 10 or greater.

A light emitting device and a light emitting module both having narrow spacing between emission faces, as well as a method of manufacturing light emitting device and a method of manufacturing light emitting module are provided.

A light emitting device 100 includes element structure bodies 15, at least one of the element structure bodies including a submount substrate 10, a light emitting element 20 disposed on the submount substrate 10, a light transmitting member 30 disposed on the light emitting element 20, and a first cover member 50 covering the lateral faces of the light emitting element 20 on the submount substrate 10, and a second cover member 60 supporting the element structure bodies 15 by covering the lateral faces of the element structure bodies 15.

A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.