An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

A lower sheet disposed below a display panel includes a heat radiation layer having a first side and a second side facing the first side. A first film layer is disposed on the first side of the heat radiation layer. A second film layer is disposed on the second side of the heat radiation layer. A first resin layer is disposed between the heat radiation layer and the first film layer.

A second resin layer is disposed between the heat radiation layer and the second film layer. A sealing layer is disposed on lateral sides of the heat radiation layer. The sealing layer directly contacts an entirety of the lateral sides of the heat radiation layer, and directly contacts at least a portion of lateral sides of the first resin layer and the second resin layer.

A light-emitting device of the present invention includes a plurality of substrates, an insulating portion, and an insulating upper surface coating film. The plurality of metal substrates are placed side by side to be separated from one another. The insulating portion is made of ceramic and fills the clearance. The insulating upper surface coating film is formed so as to integrally cover respective one substrate surfaces of the plurality of substrates and has an opening portion that spreads over the one substrate surface of one substrate among the plurality of substrates and the one substrate surface of another substrate adjacent to the one substrate across the clearance. The opening portion exposes an element placing region for placing an element.

A manufacturing method of an LED filament and a manufacturing method of a bulb are provided. The steps are as follows: step S1, preparing a support; step S2, fixing chips; step S3, performing a first baking and performing a lighting test after cooling; step S4, dispensing a glue in which a semi-finished product is covered with a covering glue, and a viscosity of the covering glue used is 5000 to 50000 mPa.Math.S; and step S5, performing a second baking. According to the disclosure, the preparation of the LED filament is completed through support preparing, chip fixing, the first baking, dispensing and the second baking, and the covering glue selected during dispensing has good fluidity, and the fluorescent powders mixed in the covering glue can be uniformly dispersed, thus preventing precipitation or agglomeration and ensuring good light distribution.

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

In an embodiment a component includes a semiconductor body, a converter layer, a filling layer and an intermediate layer arranged in a vertical direction between the semiconductor body and the converter layer, wherein the semiconductor body has a surface which faces the converter layer, is structured and has vertical recesses, wherein the vertical recesses are filled with a material of the filling layer that has a higher thermal conductivity than silicone, wherein the intermediate layer or the semiconductor body has a higher mechanical hardness than the filling layer, and wherein the structured surface of the semiconductor body has local elevations and local recesses, the structured surface including exclusively the surface of an n-type or a p-type semiconductor layer.

In an embodiment an optoelectronic semiconductor component includes a heat dissipating structure having a plurality of protrusions and a radiation emitting semiconductor chip, wherein the semiconductor chip is arranged at the heat dissipating structure, wherein at least some of the protrusions are arranged at a radiation exit side of the component, and wherein a height of at least some of the protrusions corresponds at least to a height of the semiconductor chip.

A method of manufacturing a display module which is able to present a split-screen display without a black line prominent at the boundary includes: providing a first circuit substrate including a plurality of first pads, providing a second circuit substrate including a plurality of second pads; bonding the first circuit substrate and the second circuit sub state onto a surface of a heat dissipation plate through a first heat conductive adhesive; and mounting a plurality of light emitting diodes onto the first conductive wiring layer and the third conductive wiring layer, where one light emitting diodes is electrically connected to two first pad, one light emitting diode is electrically connected to one first pad and one second pad, and one light emitting diode is electrically connected to two second pads. A display module including light emitting diodes is also disclosed.

A light emitting device includes: a plurality of element structural bodies, each including: a substrate, a light emitting element mounted on or above the substrate, and a light-transmissive member disposed on or above the light emitting element, wherein at least three of the plurality of element structural bodies are disposed along a first direction; a first covering member that covers lateral surfaces of the substrate, the light emitting element, and the light-transmissive member of each of the plurality of element structural bodies; and a support member that covers a lateral surface of the first covering member, wherein at least a portion of the support member is disposed lateral to the plurality of element structural bodies and extends along the first direction. A rigidity of the support member is greater than a rigidity of the first covering member.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.