Patent classifications
H01P1/218
BROADBAND MAGNETOSTATIC SURFACE WAVE DEVICES WITH CUSTOMIZABLE FREQUENCY RESPONSE
Described is an intrinsically multiplexed magnetostatic surface wave (MSSW) device comprising of a pair of transducers that couple to one or more plurality of ferrite films. In embodiments, the ferrite films may be provided as one or more of a YIG, Nickle Zinc Ferrite, Lithium Ferrite configured to simultaneously provide the MSSW device having an associated plurality of MSSW operational bandwidths. The concepts, structure and technique described herein may be used to provide broadband magnetostatic surface wave devices that employ intrinsic multiplexing techniques which enable customizable frequency responses over broad bandwidths.
SHORT-WAVELENGTH SPIN WAVE TRANSDUCER
A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.
SHORT-WAVELENGTH SPIN WAVE TRANSDUCER
A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.
High-frequency device
A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.
High-frequency device
A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.
Transversely tapered frequency selective limiter
Methods and apparatus for a frequency selective limiter (FSL) having a magnetic material substrate that tapers in thickness and supports a transmission line that has segments and bends. The segments, which differ in width and are substantially parallel to each other, such that each segment traverses the substrate on a constant thickness of the substrate.
Transversely tapered frequency selective limiter
Methods and apparatus for a frequency selective limiter (FSL) having a magnetic material substrate that tapers in thickness and supports a transmission line that has segments and bends. The segments, which differ in width and are substantially parallel to each other, such that each segment traverses the substrate on a constant thickness of the substrate.
Method for minimizing center frequency shift and linearity errors in YIG filters
A method for minimizing center frequency shift and linearity errors encountered in YIG filters, comprising the following steps: automatically generating data packages in test unit depending on the user request or containing all filter characteristic states and transmitting them to the driver circuit, adjusting the desired voltage level by means of the digital to analog converters contained in the structure of the data packages received by the driver circuit, and transmitting the adjusted voltage level to the YIG filter, measuring filter characteristics (scattering parameters) corresponding to the data packages transmitted to the YIG filter in the analyser, in order to calculate the center frequency shift of the filter, determining the center frequency and linearity calculations, and recording the characteristic features measured by the analyser in the test unit.
Method for minimizing center frequency shift and linearity errors in YIG filters
A method for minimizing center frequency shift and linearity errors encountered in YIG filters, comprising the following steps: automatically generating data packages in test unit depending on the user request or containing all filter characteristic states and transmitting them to the driver circuit, adjusting the desired voltage level by means of the digital to analog converters contained in the structure of the data packages received by the driver circuit, and transmitting the adjusted voltage level to the YIG filter, measuring filter characteristics (scattering parameters) corresponding to the data packages transmitted to the YIG filter in the analyser, in order to calculate the center frequency shift of the filter, determining the center frequency and linearity calculations, and recording the characteristic features measured by the analyser in the test unit.
Frequency Selective Limiter Having an Enhanced Bandwidth
Methods and apparatus for providing a frequency selective limiters (FSL) having a free-standing Yttrium Iron Garnet (YIG) film with first and second opposing surfaces. A metal plane is disposed on one surface of the YIG film to provide the YIG film with a metalized surface. At least one transducer is disposed on the other surface of the YIG film with a respective ends coupled to the metalized surface of the YIG film.