A frequency selective limiter (FSL) having an input port and an output port can comprise a plurality of vertically stacked transmission line structures. Each of the transmission line structures can be electrically coupled to a transmission line structure disposed directly above it and with a first one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL input port and a second one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL output port. Each of the plurality of vertically stacked transmission line structures can comprise a magnetic material having first and second opposing surfaces and one or more conductors disposed on at least one of the surfaces of the magnetic material.

A frequency selective limiter (FSL) having an input port and an output port can comprise a plurality of vertically stacked transmission line structures. Each of the transmission line structures can be electrically coupled to a transmission line structure disposed directly above it and with a first one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL input port and a second one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL output port. Each of the plurality of vertically stacked transmission line structures can comprise a magnetic material having first and second opposing surfaces and one or more conductors disposed on at least one of the surfaces of the magnetic material.

A low loss unidirectional conductive sheet using magnetic field biasing and electron spin precession for coupling RF power to ferrite resonators, comprising the step of placing a plurality of ferrite resonators in a bias magnetic field to excite the electron spins of the materials of said ferrite resonators into precession.

A low loss unidirectional conductive sheet using magnetic field biasing and electron spin precession for coupling RF power to ferrite resonators, comprising the step of placing a plurality of ferrite resonators in a bias magnetic field to excite the electron spins of the materials of said ferrite resonators into precession.

A magnetoresistance effect device includes a magnetoresistance effect element, and an external magnetic field application unit for applying an external magnetic field to the magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The external magnetic field application unit includes a magnetization retention section and a magnetization setting section. The magnetization setting section has a function of setting a magnetization to be used to generate the external magnetic field into the magnetization retention section by applying a magnetization-setting magnetic field to the magnetization retention section and then stopping the application of the magnetization-setting magnetic field. The magnetization retention section has a function of retaining the set magnetization after the application of the magnetization-setting magnetic field is stopped.

A high frequency yttrium iron garnet oscillator is described that comprises a coplanar yttrium iron garnet resonator. The coplanar yttrium iron garnet resonator has an yttrium iron garnet sphere, a coplanar coupling structure and a coplanar waveguide. The coplanar coupling structure is integrated with the coplanar waveguide. The coplanar coupling structure is coupled to the yttrium iron garnet sphere. Further, a method of manufacturing a high frequency yttrium iron garnet oscillator is described.

A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a magnetic material having first and second opposing surfaces. A first conductor is disposed on the first surface of the magnetic material, where a width of the first conductor decreases from a first end of the FSL to a second end of the FSL along a length of the FSL. Two second conductors are disposed on the second surface of the magnetic material, where a width of a gap between the two second conductors decreases from the first end of the FSL to the second end of the FSL along a length of the FSL. The first conductor and two second conductors form a biplanar waveguide transmission line.

Disclosed herein is a nonreciprocal circuit element that includes a permanent magnet, a magnetic material having an insulating property, a magnetic rotator sandwiched between the permanent magnet and the magnetic material, and an external terminal. The magnetic rotator includes a center conductor connected to the external terminal, and first and second ferrite cores sandwiching the center conductor. The external terminal covers a side surface of the magnetic material without covering a side surface of the permanent magnet.

Disclosed herein is a nonreciprocal circuit element that includes a permanent magnet, a magnetic material having an insulating property, a magnetic rotator sandwiched between the permanent magnet and the magnetic material, and an external terminal. The magnetic rotator includes a center conductor connected to the external terminal, and first and second ferrite cores sandwiching the center conductor. The external terminal covers a side surface of the magnetic material without covering a side surface of the permanent magnet.

Provided is a process for manufacturing magnetically tunable nano-resonators. The nano-resonators comprise nanoparticles of a crystalline magnetic material embedded into cavities of a substrate.