An acoustoelectric amplifier and a number of corresponding devices are disclosed, along with methods for making the same. The acoustoelectric amplifier employs wafer-scale bonding to heterogeneously integrate an epitaxial III-V semiconductor stack and a piezoelectric layer. To increase the acoustic gain with low power dissipation, the electromechanical coupling coefficient (k.sup.2) of the piezoelectric layer should be high to increase the acoustoelectric interaction strength. The semiconductor mobility should be high to reduce the voltage required to increase the carrier drift velocity. The conductivity-thickness product should be low to prevent screening of the acoustoelectric interaction. The acoustoelectric amplifier or its corresponding material structure may be used to form circulators, isolators, oscillators, mixers, and correlators, while interconnecting waveguides may be formed of the piezoelectric layer or the semiconductor stack. An exemplary piezoelectric layer is formed of LiNbO.sub.3, while an exemplary semiconductor stack is formed of InGaAs/InP.

An acoustoelectric amplifier and a number of corresponding devices are disclosed, along with methods for making the same. The acoustoelectric amplifier employs wafer-scale bonding to heterogeneously integrate an epitaxial III-V semiconductor stack and a piezoelectric layer. To increase the acoustic gain with low power dissipation, the electromechanical coupling coefficient (k.sup.2) of the piezoelectric layer should be high to increase the acoustoelectric interaction strength. The semiconductor mobility should be high to reduce the voltage required to increase the carrier drift velocity. The conductivity-thickness product should be low to prevent screening of the acoustoelectric interaction. The acoustoelectric amplifier or its corresponding material structure may be used to form circulators, isolators, oscillators, mixers, and correlators, while interconnecting waveguides may be formed of the piezoelectric layer or the semiconductor stack. An exemplary piezoelectric layer is formed of LiNbO.sub.3, while an exemplary semiconductor stack is formed of InGaAs/InP.

A reciprocal element includes a housing having a plurality of circumferential side portions with a plurality of openings and a bottom portion in which at least one removed portion is defined. A first lamination part includes a center conductor with a plurality of leads extending to the outside of the plurality of openings, respectively, wherein the first lamination part is laminated on the bottom portion. A frame includes a main body to accommodate the first lamination part, at least one leg portion extending from a lower edge of the main body and insertedly coupled to the removed portion, and a plurality of supporting portions extending in an outer direction from the main body to support the plurality of leads, wherein through-holes extend in a vertical direction and defined in the plurality of supporting portions, respectively; and a plurality of conductive pins coupled to the plurality of through-holes, respectively.

A circulator is provided, comprising, first second and third conductors forming three equally spaced junctions and a permanent magnet configured to apply a shaped bias magnetic field to a ferrite resonator in operable communication with the first, second, and third conductors. The permanent magnet comprises a substantially planar monolithic structure having defined thereon at least first and second substantially concentric regions having first and second respective magnetic field strength levels, wherein the second magnetic field strength level is lower than the first magnetic field strength level. The first and second magnetic field strength levels are configured to cooperate to shape an external bias magnetic field of the permanent magnet to counteract at least a portion of a demagnetizing effect resulting from of an overall shape of the ferrite resonator, to achieve a substantially uniform internal magnetic bias within at least a portion of the ferrite resonator.

A circulator is provided, comprising, first second and third conductors forming three equally spaced junctions and a permanent magnet configured to apply a shaped bias magnetic field to a ferrite resonator in operable communication with the first, second, and third conductors. The permanent magnet comprises a substantially planar monolithic structure having defined thereon at least first and second substantially concentric regions having first and second respective magnetic field strength levels, wherein the second magnetic field strength level is lower than the first magnetic field strength level. The first and second magnetic field strength levels are configured to cooperate to shape an external bias magnetic field of the permanent magnet to counteract at least a portion of a demagnetizing effect resulting from of an overall shape of the ferrite resonator, to achieve a substantially uniform internal magnetic bias within at least a portion of the ferrite resonator.

According to some aspects, a circuit is provided comprising a plurality of Josephson junctions arranged in series in a loop, at least one magnetic element producing magnetic flux through the loop, a plurality of superconducting resonators, each resonator coupled to the loop between a different neighboring pair of Josephson junctions of the plurality of Josephson junctions, a plurality of ports, each port coupled to at least one of the plurality of resonators at ends of the resonators opposite to ends at which the resonators are coupled to the loop, and at least one controller configured to provide input energy to each of the plurality of ports that causes the circuit to function as a circulator between the plurality of ports.

According to some aspects, a circuit is provided comprising a plurality of Josephson junctions arranged in series in a loop, at least one magnetic element producing magnetic flux through the loop, a plurality of superconducting resonators, each resonator coupled to the loop between a different neighboring pair of Josephson junctions of the plurality of Josephson junctions, a plurality of ports, each port coupled to at least one of the plurality of resonators at ends of the resonators opposite to ends at which the resonators are coupled to the loop, and at least one controller configured to provide input energy to each of the plurality of ports that causes the circuit to function as a circulator between the plurality of ports.

A circuit comprising a differential transmission line and eight switches provides non-reciprocal signal flow. In some embodiments, the circuit can be driven by four local oscillator signals. The circuit can be used to form a gyrator. The circuit can be used to form a circulator. The circuit can be used to form three-port circulator than can provide direction signal flow between a transmitter and an antenna and from the antenna to a receiver. The three-port circulator can be used to implement a full duplex transceiver that uses a single antenna for transmitting and receiving.

A circulator is provided, comprising, first second and third conductors forming three equally spaced junctions and a permanent magnet configured to apply a shaped bias magnetic field to a ferrite resonator in operable communication with the first, second, and third conductors. The permanent magnet comprises a substantially planar monolithic structure having defined thereon at least first and second substantially concentric regions having first and second respective magnetic field strength levels, wherein the second magnetic field strength level is lower than the first magnetic field strength level. The first and second magnetic field strength levels are configured to cooperate to shape an external bias magnetic field of the permanent magnet to counteract at least a portion of a demagnetizing effect resulting from of an overall shape of the ferrite resonator, to achieve a substantially uniform internal magnetic bias within at least a portion of the ferrite resonator.

A circulator is provided, comprising, first second and third conductors forming three equally spaced junctions and a permanent magnet configured to apply a shaped bias magnetic field to a ferrite resonator in operable communication with the first, second, and third conductors. The permanent magnet comprises a substantially planar monolithic structure having defined thereon at least first and second substantially concentric regions having first and second respective magnetic field strength levels, wherein the second magnetic field strength level is lower than the first magnetic field strength level. The first and second magnetic field strength levels are configured to cooperate to shape an external bias magnetic field of the permanent magnet to counteract at least a portion of a demagnetizing effect resulting from of an overall shape of the ferrite resonator, to achieve a substantially uniform internal magnetic bias within at least a portion of the ferrite resonator.