A semiconductor package is provided. The semiconductor package includes a semiconductor die, a stack of polymer layers, redistribution elements and a passive filter. The polymer layers cover a front surface of the semiconductor die. The redistribution elements and the passive filter are disposed in the stack of polymer layers. The passive filter includes a ground plane and conductive patches. The ground plane is overlapped with the conductive patches, and the conductive patches are laterally separated from one another. The ground plane is electrically coupled to a reference voltage. The conductive patches are electrically connected to the ground plane, electrically floated, or electrically coupled to a direct current (DC) voltage.

A waveguide structure includes at least one transmission line and at least one conductive pattern layer. At least a portion of the transmission line and at least a portion of the conductive pattern layer overlap each other as observed from a surface side of the conductive pattern layer. A surface electrical resistance value of the conductive pattern layer is in a range of 0.005 Ω/□ to 30 Ω/□.

A structure that includes a signal trace embedded in a dielectric layer, the signal trace including a first contact pad at one end of the signal trace and a second contact pad at the other end of the signal trace. The dielectric layer has a first ground plane on a first surface and a second ground plane on a second opposing surface. A first conducting ground shield wall on a first side of the signal trace connects the first ground plane to the second ground plane. A second conducting ground shield wall on a second side of the signal trace connects the first ground plane to the second ground plane. The first ground plane, the second ground plane, the first conducting ground shield wall, and the second conducting ground shield wall enclose the signal trace.

A radar sensor. The radar sensor includes a high-frequency component situated on a circuit board and a waveguide structure, which is connected via a coupling structure to the high-frequency component. The waveguide structure is formed in a mold, which is injection molded to a part of the circuit board supporting the high-frequency component.

An electronic device according to various embodiments of the present invention may comprise: a circuit substrate comprising a first layer including a first wire, a second wire formed at one side surface of the first wire along the first wire, and a third wire formed at the other side surface of the first wire along the first wire, a second layer including a ground plane formed along the first wire, the second wire, and the third wire and electrically connected to the second wire and the third wire, and an insulation layer disposed between the first layer and the second layer and having first permittivity; and a conductive member which is disposed above the first layer to have a dielectric-fillable interval space along the first wire and is electrically connected to the ground of the electronic device, the dielectric having second permittivity lower than the first permittivity.

A microwave or radio frequency (RF) device includes an insulating substrate having a first surface and a second surface opposing the first surface. The device also includes a crossover conductor disposed on the first surface extending between a first edge of the first surface and a second edge of the first surface. The device also includes a depression in the second surface defined at least in part by (i) a third surface recessed in relation to the second surface, and (ii) at least one sidewall that extends between the second surface and the third surface. The device further includes a conductive coating formed over at least a portion of the second surface, the third surface, and the at least one sidewall, where the conductive coating is insulated from the crossover conductor by the insulating substrate.

A Doherty power amplifier and a device are disclosed. In a combiner of the Doherty power amplifier, a first input port and a termination port are open coupled by at least two coupled microstrip lines and/or a second input port and an output port are open coupled by at least two coupled microstrip lines. Therefore, a balanced amplitude bandwidth may be obtained and may be much broader than that of the existing solutions, in addition, a controllable size or a potentially small size may be realized. Furthermore, the Doherty power amplifier in this disclosure may provide large 2.sup.nd harmonic suppression to meet product spectrum mask requirements.

In a transmission path transmitting high-frequency signals each signal contains a frequency component of over 8 GHz. The transmission path includes a nickel-phosphorus layer containing nickel and phosphorus, and a phosphorus concentration of the nickel-phosphorus layer is over 0 mass % and less than 8 mass %. Such a structure enables the transmission path to have little loss even when a signal at a frequency of over 8 GHz is transmitted.

A microcircuit integrating a waveguide with a rectangular cross-section, the microcircuit including a first chip and a second chip assembled on each other, the waveguide being located in a junction zone between chips and extending in parallel to the chips, the waveguide including a first conductive plate located on the side of the first chip and parallel to the first chip, and a second conductive plate, located on the side of the second chip and parallel to the second chip, the waveguide being laterally delimited on one and the other side of the waveguide by one or more electrical connecting elements electrically connecting the first chip to the second chip.

A phase shifter includes opposite first and second substrates and a dielectric layer between the first and second substrates. The first substrate includes: a first base plate; a signal line and a reference electrode on a side of the first base plate proximal to the dielectric layer. The second substrate includes a second base plate, and at least one patch electrode on a side of the second base plate proximal to the dielectric layer. The phase shifter further includes structures connected to both ends of the signal line, respectively; the first feeding structure changes a transmission direction of a microwave signal through the signal line, so that the microwave signal is transmitted in a first direction; and the second feeding structure changes a transmission direction of the microwave signal through the signal line, so that the microwave signal is transmitted in a second direction.