Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

A signal transmission line includes a laminate, a signal conductor, a hollow portion, and a reinforcing conductor. The laminate includes a flexible laminate including resin layers each of which has flexibility. The signal conductor extends in a signal transmission direction of the laminate and is disposed in an intermediate position in a laminating direction of the resin layers. The hollow portion is in the laminate and defined by an opening provided at a portion of the plurality of resin layers. The reinforcing conductor is in the laminate. The hollow portion is disposed at a position overlapping with the signal conductor, in a plan view of the laminate from a surface perpendicular or substantially perpendicular to the laminating direction. The reinforcing conductor is disposed at a position different from the position of the hollow portion in a plan view.

Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes first waveguides over a package substrate. The first waveguides include first angled conductive layers, first transmission lines, and first cavities. The semiconductor package also includes a first dielectric over the first waveguides and package substrate, second waveguides over the first dielectric and first waveguides, and a second dielectric over the second waveguides and first dielectric. The second waveguides include second angled conductive layers, second transmission lines, and second cavities. The first angled conductive layers are positioned over the first transmission lines and package substrate having a first pattern of first triangular structures. The second angled conductive layers are positioned over the second transmission lines and first dielectric having a second pattern of second triangular structures, where the second pattern is shaped as a coaxial interconnects enclosed with second triangular structures and portions of first dielectric.

A transition structure for millimeter wave is provided. The transition structure includes a first layer signal element coupled to an end of a first transmission line and a plurality of first layer ground elements surrounding the end of the first transmission line equidistantly from the end of the first transmission line and disposed along two opposite sides of a strip body of the first transmission line equidistantly from the strip body of the first transmission line. The transition structure further includes an intermediate layer signal element coupled to the first layer signal element and a plurality of intermediate layer ground elements surrounding the intermediate layer signal element quasi-coaxially. A multilayer transition structure including a multilayer structure and the transition structure is also provided. Therefore, the problem of operating frequency caused by the thickness of the multilayer structure can be overcome, thereby increasing the resonance frequency of the multilayer structure.

A multilayer substrate includes layers stacked on each other in an up-down direction of a multilayer body. The layers include a first spacer, a first ground conductive layer above the first spacer, and a signal conductive layer that overlaps the first ground conductive layer and is located below the first spacer. First through-holes pass through the first spacer and are arranged along a first direction. A distance between centroids of first through-holes adjacent to each other in the first direction is uniform or substantially uniform. Sets of first through-holes are provided in the first spacer. Sets of first through-holes are arranged along a second direction. A distance between centroids of first through-holes adjacent to each other in the second direction is uniform or substantially uniform. At least one first through-hole is a first hollow through-hole overlapping the signal conductive layer.

The present disclosure relates to an interposer (120), which is a circuit board that has a multilayer structure and that establishes a connection between layers using a via conductor. The interposer (120) includes first and second transmission lines that are connected in series and a first stub and a second stub that are respectively connected to the first transmission line and the second transmission line. The first and second stubs are formed by wiring lines provided in respective different layers, and a second transmission line (123), which connects the first stub to the second stub, includes a via conductor and a wiring line provided in the layer where the second stub (124) is formed.

A transmission line substrate includes a line portion and a connecting portion. The transmission line substrate includes a base material, a first ground conductor, a second ground conductor, a signal line, an external electrode, a second interlayer connection conductor. In the line portion, a transmission line having a strip line structure including the signal line, the first ground conductor, and the second ground conductor is provided. In the connecting portion, the signal line and the external electrode face each other in a stacking direction, without including therebetween an interlayer connection conductor. The second interlayer connection conductor surrounds a facing portion in which the signal line and the external electrode face each other in the Z-axis direction.

A distributor and a synthesizer with low loss are disclosed. In one example, a distributor/synthesizer has a distribution line that distributes a path from an input branch unit connected to an external transmission line on an input side into n-distributed paths. An output branch unit divides the n-distributed paths into an internal side and an external transmission line on an output side. On the internal side, a phase adjustment unit is arranged between the output branch unit and a coupling terminal, and adjusts the phase. A phase rotation amount from the input branch unit to the output branch unit of each of the n-distributed paths is π/2 [rad], and a phase rotation amount from the output branch unit to the coupling terminal is π [rad] or a real number multiple of π [rad]. The present disclosure can, for example, be applied to an FEM of a signal processing device.

Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

A transmission line includes first, second, and third signal lines defining a parallel portion. No conductor connecting the first ground conductor and the second ground conductor is between the first signal line and the second signal line, and the first signal line is closer to the ground connection conductor than the second signal line. A closest frequency difference between a fundamental wave of one of the first signal and the second signal and a fundamental wave or a higher harmonic wave of the other of the first signal and the second signal is equal to or larger than a closest frequency difference between a fundamental wave of one of the first signal and the third signal and a fundamental wave or a higher harmonic wave of the other of the first signal and the third signal.