An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

The present disclosure provides an apparatus for generating fiber delivered laser-induced dynamically controlled white light emission. The apparatus includes a laser diode unit for generating a laser electromagnetic radiation with a blue emission in a range from 395 nm to 490 nm that is delivered by an optical fiber. The apparatus further includes a dynamic phosphor unit configured to receive the laser exited from the optical fiber and controllably deflect a beam focused by a first optics sub-unit to a surface spot on a phosphor plate to produce a white light emission. Additionally, and the dynamic phosphor unit includes a second optics sub-unit configured to collect the white light emission and to project to a far field. Furthermore, the apparatus includes an electronics control unit comprising a laser diode driver and a MEMS driver for respectively control the laser diode unit and the dynamic phosphor unit in mutually synchronized manner.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

In a manufacturing method of a semiconductor element of the present disclosure, a first semiconductor part (SL1) includes a protruding portion (TS) protruding toward an underlying substrate (UK), the protruding portion contains a nitride semiconductor, the protruding portion and the underlying substrate are bonded to each other, a semiconductor substrate (HK) includes a hollow portion (TK) located between the underlying substrate and the first semiconductor part, the hollow portion is in contact with a side surface of the protruding portion and communicates with the outside of the semiconductor substrate, and the protruding portion (TS) is irradiated with the laser beam (LZ) before the first semiconductor part is separated from the semiconductor substrate.

A semiconductor laser chip and a preparation method therefor, the method comprising: providing an epitaxial wafer (100), the epitaxial wafer (100) comprising a plurality of resonant cavities (110) arranged in parallel; providing a heat sink substrate (200); attaching the epitaxial wafer (100) to the heat sink substrate (200) so as to form a first chip semi-finished product (10); performing first division on the first chip semi-finished product (10) in the direction perpendicular to the resonant cavities (110) so as to divide the first chip semi-finished product (10) into a plurality of second chip semi-finished products (20); and performing second division on the second chip semi-finished products (20) in the direction parallel to the resonant cavities (110) so as to divide the second chip semi-finished products (20) into a plurality of semiconductor laser chips (30) such that the semiconductor laser chips (30) comprise at least one laser bar.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

A miniature illuminator is described which is suitable for assembly into mobile electronics devices such as cell phones and computer tablets. Features of the invention overcome the complexity of current miniature illuminators by using single molded structure which includes all the electrical feedthrough connections and has the features necessary for accurate mounting of optical components. The molded structure includes laser safety connections which provide an electrical interrupt signal when the illuminator is damaged in a way that could result in propagation of non-eye safe illuminator beams. In an alternate operation the illuminator provides a signal when a subject gets too close to the illuminator and would receive unsafe VCSEL illuminator beam. The laser safety feature is integrated into the molded Illuminator package so that separate electrically connected structures to achieve this function are eliminated.

A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.