A light emitting device includes a base, a first light emitting element and a first light reflecting member disposed on the base and a lens member. The first light reflecting member is positioned with respect to the first light emitting element so that emitted light from the first light emitting element is divided into a portion of the emitted light from the first light emitting element irradiating onto the light reflecting face and a portion of the emitted light from the first light emitting element traveling outside of the light reflecting face by having an edge of the light reflecting face serve as a boundary. The lens member includes a reflected light passing region having a first lens shape configured to control the travelling direction of reflected light, and a non-reflected light passing region having a second lens shape configured to control a travelling direction of non-reflected light.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

A laser source (340) that generates an output beam (354) that is directed along a beam axis (354A) that is coaxial with a first axis and orthogonal to a second axis comprises a first frame (356), a laser (358), and a first mounting assembly (360). The laser (358) generates the output beam (354) that is directed along the beam axis (354A). The first mounting assembly (360) couples the laser (358) to the first frame (356). The first mounting assembly (360) allows the laser (358) to expand and contract relative to the first frame (356) along the first axis and along the second axis, while maintaining alignment of the output beam (354) so the beam axis (354A) is substantially coaxial with the first axis. The first mounting assembly (360) can include a first fastener assembly (366) that couples the laser (358) to the first frame (356), and a first alignment assembly (368) that maintains alignment of the laser (358) along a first alignment axis (370) that is substantially parallel to the first axis.

A light source device 100 includes a first substrate 10 having a first mounting surface 10a, a second substrate 11 having a second mounting surface 11a that opposes the first mounting surface, a first laser diode 30a directly or indirectly supported by the first mounting surface, a second laser diode 30b directly or indirectly supported by the first mounting surface, and a third laser diode 30c directly or indirectly supported by the second mounting surface. The emission point of the third laser diode is positioned between the emission point of the first laser diode and the emission point of the second laser diode in the width direction, and in a plan view, when viewed in the direction perpendicular to the first mounting surface, at least one the first laser diode and the second laser diode at least partially overlaps the third laser diode.

Novel ICL layering designs, ridge waveguide architectures, and processing protocols that will significantly lower the optical losses and improve the power conversion efficiencies of interband cascade lasers designed for both DFB single-mode and high-power applications. The semiconductor top cladding and metal contact layers are eliminated or significantly reduced. By instead using a dielectric or air top clad, or dielectric or air layers to supplement a thin top clad, in conjunction with lateral current injection and weak index-guiding, the present invention will substantially reduce the internal loss of such ICLs, resulting in lower lasing threshold, higher efficiency, and higher maximum power.

An optomechanical laser includes: a basal member; a mechanical transducer; a laser disposed on the mechanical transducer, the laser being displaced along the displacement axis in response to a displacement of the mechanical transducer relative to the basal member; a mirror disposed on the armature in optical communication with the laser and opposing the laser; the armature disposed on the basal member and rigidly connecting the mirror to the basal member such that the mirror and the armature move in synchrony with the basal member, and the armature provides a substantially constant distance between the basal member and the mirror; and a cavity comprising: the laser; the mirror; and a cavity length between the laser and the mirror that changes in response to displacement of the laser according to the displacement of the mechanical transducer relative to the basal member, the optomechanical laser providing laser light.

A connection structure for a laser and a laser assembly are provided. The connection structure for a laser includes a first insulation substrate, where the first insulation substrate includes a conductive path separately on an upper surface and a lower surface thereof. A second insulation substrate is disposed on the upper surface of the first insulation substrate. An upper surface of the second insulation substrate includes a conductive path. The conductive path on the upper surface of the second insulation substrate is electrically connected to the conductive path on the lower surface of the first insulation substrate via a through-hole. The connection structure for a laser and the laser assembly in the present disclosure are configured to supplying power to a laser.

A TO-type optical element package for high-speed communication which is used for an optical module for high-speed communication of at least 10 gigabits per sec (Gbps) and enables thermoelectric elements to be embedded in an upper part of a stem. The TO-type optical element package for high-speed communication can transmit high-quality signals in a high-speed operation of the optical element by inserting and fixing an electrode pin (120) in a through-hole formed on a stem base (100), surrounding a lateral surface of the electrode pin (120) protruding to an upper part of the stem base (100), with a metallic instrument (400) having a through-hole so as to enable the impedance of an electrode pin (120) part, surrounded with the stem base (100), to correspond to the impedance of an electrode pin (120) part protruding to the upper part of the stem base (100).

A laser assembly (1710) for generating an assembly output beam (1712) includes a laser subassembly (1716) including a first laser module (1716A) and a second laser module (1716B), a transform assembly (1744), and a beam combiner (1746). The first laser module (1716A) emits a plurality of spaced apart first laser beams (1720A). The second laser module (1716B) emits a plurality of spaced apart second laser beams (1720B). The transform assembly (1744) is positioned in a path of the laser beams (1720A) (1720B). The transform assembly (1744) directs the laser beams (1720A) (1720B) to spatially overlap at a focal plane of the transform assembly (1744). The beam combiner (1746) is positioned at the focal plane that combines the lasers beams (1720A) (1720B) to provide a combination beam. The laser beams (1720A) (1720B) directed by the transform assembly (1744) impinge on the beam combiner (1746) at different angles.

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.