A quantum cascade laser device includes a QCL element; a lens; and a lens holder having a small-diameter hole, a large-diameter hole, and a counterbore surface. At least a part of a side surface of the lens is fixed to an inner surface of the large-diameter hole in a state where an edge portion of an incident surface of the lens is in contact with the counterbore surface. A central axis of the small-diameter hole is eccentric from that of the large-diameter hole. The side surface of the lens is positioned with respect to the inner surface of the large-diameter hole along a direction from the central axis of the large-diameter hole toward the central axis of the small-diameter hole. A central axis of the lens is disposed at a position closer to the central axis of the small-diameter hole than to the central axis of the large-diameter hole.

An optical module includes a light-forming unit to form light. The light-forming unit includes a base member having an electronic temperature control module, a base plate, a plurality of submounts, and a microelectromechanical system (MEMS) base. The light-forming unit also includes a plurality of laser diodes arranged on the submounts, a filter arranged on the base plate and located to receive the light emitted from the plurality of laser diodes and multiplex the emitted light, a MEMS arranged on the MEMS base and located to receive the light multiplexed by the filter. The MEMS includes a scanning mirror to scan the light multiplexed by the filter, and the electronic temperature control module regulates a temperature range of the MEMS. The light-forming unit also includes a protective member surrounding and sealing the light-forming unit, which includes a base body and a lid welded to the base body.

[Object] To provide a compact and high-performance laser device and a laser apparatus.

[Solving Means] A laser device according to the present disclosure includes an excitation light source having a first reflective layer with respect to a first wavelength; a laser medium having a second reflective layer with respect to a second wavelength on a first surface facing to the excitation light source and a third reflective layer with respect to the first wavelength on a second surface opposite to the first surface; and a saturable absorber having a fourth reflective layer with respect to the second wavelength on a third surface opposite to the laser medium.

In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A laser source assembly is based upon an optical reference substrate that is utilized as a common optical reference plane upon which both a fiber array and a laser diode array are disposed and positioned to provide alignment between the components. Passive optical components used to provide alignment between the laser diode array and the fiber array are also located on the optical reference substrate. A top surface of the reference substrate is patterned to include alignment fiducials and bond locations for the fiber array receiving block, laser diode array submount and passive optical components. The receiving block is configured to present the optical fibers at a height that facilitates alignment with the output beams from the laser diodes positioned on the silicon submount.

A laser module includes a gain chip, temperature sensors, a case, and a thermoelectric cooler (TEC). The gain chip emits a laser beam. One of the temperature sensors measures a first temperature of the gain chip and is encompassed by the gain chip. The other temperature sensor is adhered to the case and measures a second temperature. The TEC tunes the laser beam emitted by the gain chip to a desired wavelength by varying the first temperature of the gain chip through a set of third temperatures for various values of the second temperature. The set of third temperatures is selected from various values of the first temperature such that the laser beam emitted at the set of third temperatures is mode-hop free.

An external cavity diode laser has been developed to achieve a linear frequency chirp over a broad bandwidth using a silicon photonic filter chip as the external cavity. By appropriately chirping the cavity phase using the gain chip and/or a cavity phase modulator on the silicon photonic chip along with simultaneously varying the filter resonance, approximately linear frequency chirping can be accomplished for at least 50 GHz, although desirable structures with useful lesser chirp bandwidths are also described. With careful control of the chip design, it is possible to achieve predictable behavior of mode jumps along with large scannable ranges within a mode, which allows for stitching together segments of linear chirp through a mode jump to provide for very large chirp bandwidths greater than 1 THz.

An electronic device including a heat-radiant structure of a camera is provided. The electronic device includes a housing including a front plate, a back plate, an image sensor to receive light through a first region of the back plate, and a laser emitter to emit light through a second region of the back plate, a laser driver, a housing structure surrounding at least a part of a side face of the image sensor and driver, a first metal structure, a first heat transfer member including a first portion, a second portion, and a third portion extended from the second portion to a space between the driver and the front plate, a second heat transfer member extended from the third portion of the first heat transfer member, and a first thermal interface material (TIM) disposed between the second heat transfer member and the front plate.

An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.