An optical member includes: a main body having transparency or heat dissipation properties; an optical film disposed on an upper face of the main body; a metal film disposed on the upper face of the main body in a region other than a region where the optical film is disposed; a surrounding part joined via the metal film; and a wavelength conversion part surrounded by the surrounding part. The wavelength conversion part is positioned inward of a periphery of the optical film in a top view. The wavelength conversion part is not directly bonded to the optical film and the main body.

In part, in one aspect, the disclosure relates to a system including a photonic integrated circuit (PIC) assembly, comprising a PIC comprising: a first bond pad disposed inward from an edge of the PIC a first distance; and a first wire having a first length, the first wire electrically connected to the first bond pad and extending therefrom, wherein the first distance is greater than 0.4 mm.

A laser system comprising high voltage AC-to-DC power converter and one or more current sources coupled to the high voltage AC-to-DC power converter without a DC-to-DC converter between the one or more current sources and the AC-to-DC power source. Each of the one or more current sources includes a high voltage switch and one or more independent safety shutoffs. A laser module is operably coupled to the one or more current source and configured to emit electromagnetic radiation wherein the one or more safety shutoffs are configured to disable emission of electromagnetic radiation from the laser module when triggered.

A laser system includes a high voltage AC-to-DC power converter and one or more current sources coupled to the power converter without a DC-to-DC converter between the current sources and the power converter. Each of the current sources includes a high voltage switch and one or more independent safety shutoffs. A laser module is operably coupled to the one or more current source and configured to emit electromagnetic radiation wherein the one or more safety shutoffs are configured to disable emission of electromagnetic radiation from the laser module when triggered. A current source controller coupled to the safety shutoff(s) is configured to generate enabling signals that enable normal current source operation. The controller includes circuitry configured to measure power across the high voltage switch when the controller instructs the high voltage switch to turn off to determine proper operation of the safety shutoff(s).

Systems, methods, and other embodiments for a new compact narrowband diode-pumped solid-state laser device enabled by Volume Bragg Grating (VBG) technology and capable of operating at the watt or higher output power level. This laser is stable, operates in a transverse electromagnetic (TEM) output mode, and with a single-narrowband (<1 kHz FWHM) longitudinal mode with acceptable relative intensity noise (RIN) performance from 1-100 GHz. In a preferred embodiment of the present invention, the TEM output mode is a TEM.sub.00 Gaussian output mode.

A laser module produces pulsed laser energy in a wavelength range of 495-580 nm based on duration, peak power, and interval parameter information. An envelope timer controls the total duration of all micropulses based on the duration and interval parameters via a pulse-width modulated (PWM) output to a micropulse timer, which in turn outputs a PWM micropulse signal. A light emitting diode driver outputs a laser current through a diode based on the micropulse signal and a dimming signal to produce the pulsed laser energy. The integrator compares a signal corresponding to a detected power level of the laser energy to a signal corresponding to the peak power parameter and outputs the dimming signal. The resulting micropulse durations are in the range of 50 to 300 microseconds for periods of about 2 milliseconds, with a duty cycle ranging from 5 to 15%. The overall pulse parameters are duration from 10 microseconds to 1.5 seconds, with periods of any value. The pulsed laser energy is delivered by ophthalmologic laser treatment devices to an eye of a patient.

A device for cooling a laser diode pump comprising a Low Size Weight Power Efficient (SWAP) Laser Diode (LSLD) assembly, including a laser diode coupled to a submount on a first surface, the submount comprising a first thermally conductive material and a heatsink coupled to a second surface of the submount, wherein the heatsink comprises a second thermally conductive material, the heatsink comprising one or more members formed on a side opposite the coupled submount. The device further comprising a housing coupled to the LSLD assembly, the housing comprising a carrier structure having an aperture configured to support the LSLD assembly on a first side and having a plurality of channels on a second side, a bottom segment configured to couple to the carrier segment to create an enclosure around the channels between a top side of the bottom segment and the second side of the carrier structure, an inlet and outlet formed in the housing for transporting a coolant into and out of the channels in the enclosure, wherein the members are disposed within the enclosure so as to expose the members to the coolant.

A light source includes a laser diode device and a wavelength conversion member. The wavelength conversion member includes a wavelength conversion element having voids and a dielectric element. The dielectric element fills the voids on a surface of the wavelength conversion element adjacent to the dielectric element. An output facet of the laser diode device is configured to output a laser beam of electromagnetic radiation. The laser beam is incident on a surface of the wavelength conversion member and a light is emitted from the wavelength conversion member. The light emission includes a mixture of wavelengths characterized by at least the second wavelength from the wavelength conversion member.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A light-emitting device includes: a semiconductor laser element; a supporting member located above the semiconductor laser element, the supporting member having a through-hole that allows light emitted from the semiconductor laser element to pass therethrough; a fluorescent member located in the through-hole, the fluorescent member containing a fluorescent material that is excitable by light emitted from the semiconductor laser element so as to emit light having a wavelength different from a wavelength of the light emitted from the semiconductor laser element; and a light-transmissive heat dissipating member including: a base portion, and a projecting portion projecting from the base portion into the through-hole. An upper surface of the projecting portion of the heat dissipating member is bonded to a lower surface of the fluorescent member. An upper surface of the base portion of the heat dissipating member is bonded to a lower surface of the supporting member.