Aspects described herein include a method of fabricating an optical component. The method comprises electrically coupling different laser channels of a laser die to different electrical leads, testing a respective optical coupling of each of the different laser channels, optically aligning an optical fiber with a first laser channel of the different laser channels having the greatest optical coupling, and designating a second laser channel of the different laser channels as a heater element for the first laser channel.

An optoelectronic package structure is provided. The optoelectronic package structure includes a heat source, a thermal conductive element, and a first optoelectronic component and a second optoelectronic component. The thermal conductive element is disposed over the heat source. The thermal conductive element defines a thermal conduction path P2 by which heat is transferred from the heat source to the thermal conductive element. The first optoelectronic component and the second optoelectronic component are arranged along an axis different from a thermal conduction path P2.

Aspects described herein include a method of fabricating an optical component, the optical component, and a method of operating the optical component. A method includes electrically coupling a first laser channel and a second laser channel of a laser die to different electrical leads and testing (i) a first optical coupling of the first laser channel and a second optical coupling of the second laser channel or (ii) a first spectral performance of the first laser channel and a second spectral performance of the second laser channel. The method also includes optically aligning an optical fiber with the first laser channel and designating the second laser channel as a heater element for the first laser channel based at least in part on (i) the first optical coupling being greater than the second optical coupling or (ii) the first spectral performance relative to the second spectral performance

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

Methods for driving a tunable laser with integrated tuning elements are disclosed. The methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable. In some examples, the tuning current and laser injection current are modulated simultaneously and a wider tuning range can result. In some examples, one or both of these currents is sinusoidally modulated. In some examples, a constant output power can be achieved while tuning the emission wavelength. In some examples, the output power and tuning can follow a linear relationship. In some examples, injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit values between the targeted and actual output power and tuning waveforms.

An external cavity diode laser has been developed to achieve a linear frequency chirp over a broad bandwidth using a silicon photonic filter chip as the external cavity. By appropriately chirping the cavity phase using the gain chip and/or a cavity phase modulator on the silicon photonic chip along with simultaneously varying the filter resonance, approximately linear frequency chirping can be accomplished for at least 50 GHz, although desirable structures with useful lesser chirp bandwidths are also described. With careful control of the chip design, it is possible to achieve predictable behavior of mode jumps along with large scannable ranges within a mode, which allows for stitching together segments of linear chirp through a mode jump to provide for very large chirp bandwidths greater than 1 THz.

A laser comprising a photonic component comprising a gain medium; and a waveguide platform comprising a Distributed Bragg Reflector, DBR, section. The photonic component is optically coupled to the waveguide platform. One or more thermal heaters are positioned at the DBR section of the waveguide platform, and/or at a phase section of the waveguide platform located between the gain medium and the DBR section.

The present disclosure is generally directed to techniques for thermal management within optical subassembly modules that include thermally coupling heat-generating components, such as laser assemblies, to a temperature control device, such as a thermoelectric cooler, without the necessity of disposing the heat-generating components within a hermetically-sealed housing. Accordingly, this arrangement provides a thermal communication path that extends from the heat-generating components, through the temperature control device, and ultimately to a heatsink component, such as a sidewall of a transceiver housing, without the thermal communication path extending through a hermetically-sealed housing/cavity.

A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.

A Peltier effect heat transfer system (208) comprising: a plurality of heat transfer elements (301-308); wherein each heat transfer element (301-308) comprises at least one semiconductor element pair arranged to yield Peltier effect heat transfer, each semiconductor element pair comprising a P-doped semiconductor element (408) and an N-doped semiconductor element (410); and the heat transfer elements (301-308) are independent such that each heat transfer element (301-308) can be activated so as to yield Peltier effect heat transfer independently of each other heat transfer element (301-308).