A device includes: a laminate including first and second regions adjacent to respective both sides of an isolation groove; a mesa stripe structure adjacent to the first region on the laminate and extending in the first direction; a bank structure adjacent to the second region on the laminate and extending in the first direction; and an electrode pattern. The isolation groove has an inner surface including a first wall surface adjacent to the first region, a second wall surface adjacent to the second region, and a bottom surface between the first and second regions. The ridge electrode extends from the side of the mesa stripe structure, along a second direction, toward the bank structure, and not beyond the second wall surface. The connection electrode is narrower in width in the first direction than any one of the ridge electrode and the pad electrode.

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.

A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m.Math.K or more; a light-emitting element that has a cathode electrode and an anode electrode and is provided on a front surface side of the base member; a capacitive element that is provided on the base member and supplies an electric current to the light-emitting element; and a reference potential wire that is provided on a rear surface side of the base member and is connected to an external reference potential. The reference potential wire is connected to the capacitive element and is insulated from the cathode electrode and the anode electrode.

A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.

A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.

An array of surface-emitting gain chips includes a common substrate, plural gain chips formed on the common substrate, each configured to generate a light beam, plural optical couplers, each located on a top surface of a corresponding gain chip of the plural gain chips, plural optical fibers, each connected with one end to a corresponding optical coupler of the plurality of optical couplers, an array wide optical coupler connected to another end of the plural optical fibers, and a single optical fiber connected to the array wide optical coupler and configured to output the combined light beams.

A semiconductor light-emitting device is provided which includes: a wiring substrate; a semiconductor light-emitting element disposed above an upper surface of the wiring substrate; and a cap unit which covers the semiconductor light-emitting element. The wiring substrate includes: a first substrate; a first metal layer and a second metal layer that are spaced apart from each other above the first substrate; and a spacer layer disposed above the first substrate. The cap unit includes a bonding surface which is bonded to the wiring substrate. The bonding surface intersects the first metal layer and the second metal layer in a top view of the wiring substrate, and the spacer layer is disposed between the bonding surface and the first substrate, at a position different from positions of the first metal layer and the second metal layer.

An edge-emitting multi-beam semiconductor laser device includes a layered structure including a substrate, an n-type cladding layer, a light-emitting layer, and a p-type cladding layer. The layered structure has m regions (m≥2) that are adjacent in a first direction, and a sum of a height of the substrate and a height of the first conductive cladding layer is different in each of the m regions, n laser resonators (2≤n≤m) each having a ridge stripe structure extending in a second direction orthogonal to the first direction are formed in the n regions among the m regions, and at least two of the n laser resonators have different oscillation wavelengths among the n laser resonators.

The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.