A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting device includes: a plurality of laser elements, each including a light emitting surface; one or more reflectors; a base including: a bottom portion on which the plurality of laser elements and the one or more reflectors are disposed, and a frame portion surrounding the plurality of laser elements in a top view; a cover attached to a top surface of the frame portion; and a lens array that is bonded to the top surface of the cover and includes: a plate-shaped portion, and a plurality of lens-shaped portions protruding upward from the plate-shaped portion, with the plurality of lens-shaped portions integrated into a one-piece body.

A device, and method of operating the device, are disclosed. The device includes: a heat spreader having a first side and a second side opposite the first side, the heat spreader including at least one oscillating heat pipe arranged between the first side and the second side, at least one of the at least one oscillating heat pipe including a plurality of interconnected channels including a working fluid; at least one optoelectronic component coupled to the first side of the heat spreader; and at least one thermoelectric cooler, wherein a cold side of the at least one thermoelectric cooler is coupled to the second side of the heat spreader. The heat spreader may include one or more heat exchange features.

Embodiments described herein may be related to apparatuses, processes, and techniques related to thermal routing techniques within a hybrid silicon laser or photonics integrated circuit to facilitate heat extraction during laser operation. In particular dual metal layers, with a top metal layer thermally coupled with P node above a quantum well and extending substantially under a heat sink, and a bottom metal layer thermally coupled with an N node, where the top metal layer and the bottom metal layer are not electrically coupled. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to thermally and/or electrically coupling a thermal die to the surface of a photonic integrated circuit (PIC) within an open cavity in a substrate, where the thermal die is proximate to a laser on the PIC. Other embodiments may be described and/or claimed.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

A light-emitting device includes a laser unit; and a first capacitive element and a second capacitive element that supply a driving electric current to the laser unit; wherein the first capacitive element has smaller equivalent series inductance than the second capacitive element, and the second capacitive element has a larger capacity and a smaller mount area than the first capacitive element.

Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate, a base on which the substrate is disposed, a holding member that holds the substrate at an angle set in advance with respect to the base, a temperature control unit disposed parallel to the substrate to adjust a temperature of the substrate, and a shaping optical system held against the substrate to shape a luminous flux emitted from the semiconductor multilayer structure.

Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.