An optoelectronic package structure is provided. The optoelectronic package structure includes a heat source, a thermal conductive element, and a first optoelectronic component and a second optoelectronic component. The thermal conductive element is disposed over the heat source. The thermal conductive element defines a thermal conduction path P2 by which heat is transferred from the heat source to the thermal conductive element. The first optoelectronic component and the second optoelectronic component are arranged along an axis different from a thermal conduction path P2.

A laser module includes a gain chip, temperature sensors, a case, and a thermoelectric cooler (TEC). The gain chip emits a laser beam. One of the temperature sensors measures a first temperature of the gain chip and is encompassed by the gain chip. The other temperature sensor is adhered to the case and measures a second temperature. The TEC tunes the laser beam emitted by the gain chip to a desired wavelength by varying the first temperature of the gain chip through a set of third temperatures for various values of the second temperature. The set of third temperatures is selected from various values of the first temperature such that the laser beam emitted at the set of third temperatures is mode-hop free.

A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

A light-emitting device includes: a base including a mount surface, and a lateral wall located around the mount surface, the lateral wall having a first upper surface and a second upper surface located at different heights from the mount surface; one or more light-emitting elements mounted on the mount surface of the base; a light-receiving element configured to receive a portion of light emitted from the one or more light-emitting elements; a first light-transmissive member bonded to the first upper surface and sealing a space in which the light-emitting elements are mounted; and a second light-transmissive member bonded to the second upper surface and supporting the light-receiving element.

A light emitting device includes a first semiconductor laser element, a light reflecting member, a base member, and a wire. The base member includes a frame part forming a frame. The frame part has a step portion inside of the frame, a bonding surface bonded to the bottom part, a first inner surface extending below the bonding surface, a second inner surface extending above the bonding surface, a first planar surface defining a planar surface of the step portion on an upper surface side, and a first electrode layer and a second electrode layer electrically connected to each other. The second electrode layer is disposed on the first planar surface. The wire is bonded to the second electrode layer and electrically connected to the first semiconductor laser element. A width of the bonding surface is greater on a first planar surface side than on an opposite side.

A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

A quantum cascade laser device includes a QCL element and a package. A light-emitting window through which laser light emitted from the QCL element passes is provided on a side wall of the package. The light-emitting window includes a small-diameter hole, a large-diameter hole larger than the small-diameter hole, a counterbore surface having an annular shape that connects the small-diameter hole and the large-diameter hole, and a window member disposed inside the large-diameter hole. An incident surface of a window member includes a first region in which an anti-reflection film is provided, and a second region metallized and formed in an annular shape to be separated from the first region and to surround the first region. The second region is joined to the counterbore surface through a solder member.

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.

Provided is a light-emitting device and a method for manufacturing the same which allow the filling performance of the film that fills the space around light-emitting elements to be improved. The light-emitting device according to the disclosure includes a substrate, a plurality of light-emitting elements and a plurality of electrodes sequentially provided on a first surface of the substrate, and a film provided on the first surface of the substrate to surround the light-emitting elements, and when the first surface is a bottom surface of the substrate, the lowermost part of a bottom surface of the film is provided in a higher position than a bottom surface of the electrode. In this way, for example, the film is formed before the substrate is provided on another substrate, so that the filling performance of the film that fills the space around the light-emitting elements can be improved.

An electronic device including a heat-radiant structure of a camera is provided. The electronic device includes a housing including a front plate, a back plate, an image sensor to receive light through a first region of the back plate, and a laser emitter to emit light through a second region of the back plate, a laser driver, a housing structure surrounding at least a part of a side face of the image sensor and driver, a first metal structure, a first heat transfer member including a first portion, a second portion, and a third portion extended from the second portion to a space between the driver and the front plate, a second heat transfer member extended from the third portion of the first heat transfer member, and a first thermal interface material (TIM) disposed between the second heat transfer member and the front plate.