A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.

Laser driver designs that aim to reduce or eliminate the problem of fault laser firing are disclosed. Various laser driver designs presented herein are based on providing a current dissipation path that is configured to start providing a resistance for dissipating at least a portion, but preferably substantially all, of the negative current from the laser diode. Dissipating at least a portion of the negative current may decrease the unintentional increase of the voltage at the input to the laser diode and, therefore, reduce the likelihood that fault laser firing will occur. A control logic may be used to control the timing of when the current dissipation path is activated (i.e., provides the resistance to dissipate the negative current from the laser diode) and when it is deactivated.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A light-emitting device includes a laser unit; and a first capacitive element and a second capacitive element that supply a driving electric current to the laser unit; wherein the first capacitive element has smaller equivalent series inductance than the second capacitive element, and the second capacitive element has a larger capacity and a smaller mount area than the first capacitive element.

An optical assembly includes a substrate; an optical subassembly that is disposed on a region of a surface of the substrate; a housing that is disposed on another region of the surface of the substrate; a first optical element that is disposed on a first support component of the housing; and a second optical element that is disposed on a second support component of the housing. The optical subassembly includes an integrated circuit (IC) driver chip; a redistribution layer (RDL) structure that is disposed on a surface of the IC driver chip, wherein the RDL structure includes a cavity; and a vertical cavity surface emitting laser (VCSEL) device disposed on a region of the surface of the RDL structure that is within the cavity of the RDL structure.

A laser device includes: a first reflecting unit; a second reflecting unit; a gain unit provided between the first reflecting unit and the second reflecting unit; a divider provided after the first reflecting unit and configured to divide laser light from the first reflecting unit into first light and second light; a first end portion positioned separately from the divider in a first direction, and positioned after the divider, the first end portion being configured to output, as output light, the first light or the first light that has been amplified; and a second end portion positioned separately from the divider in a second direction different from the first direction, the second end portion being configured to output the second light.

A laser diode driver circuit is provided that has a loop including a laser diode, a drive capacitor for storing drive charge, and a switch element, a first inductor coupled in series with the laser diode, a parallel capacitor coupled in parallel with a series circuit composed of the laser diode and the first inductor, and a first diode coupled in parallel with the series circuit in opposite polarity to the laser diode.

Systems and methods here may include improved tunable lasers having a tunable filter and a tunable channel selector that can control precisely the wavelength and the bandwidth of the light emitted by the laser, while suppressing light that may otherwise be emitted by the laser outside the desired wavelength and bandwidth with unidirectional ring lasers having a resonator of which forms a ring and where light propagates only in one of the two possible directions.

A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity.