Photonic errors in a photonic integrated circuit can be imaged using an on-chip light source integrated in a photonic layer of the circuit. The on-chip light source can generate light at wavelengths that propagates through one or more substrate layers to an image sensor sensitive to the wavelength range. The on-chip light source can be tunable and provide different power settings that can be utilized to detect different types of optical errors in the photonic integrated circuit.

A vertical cavity surface emitting laser (VCSEL)-based free space active optical transceiver component includes; a transmitter and a receiver. The transmitter includes first VCSELs, at least one first photodiode, a first focusing lens array or optical system (14), and a first printed circuit board. The receiver includes second photodiodes, at least one second VCSEL, a second focusing lens array or optical system, and a second printed circuit board. The transmission and reception of a short/medium-distance free space (wireless) high-speed optical communication signal can be implemented, and a single-channel transceiving rate may reach 10 Gbps or higher. The component may be used for implementing a free space high-speed signal transmission function in a short/medium-range high-definition multimedia interface (HDMI) device.

An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode. The laser diode and the photodiode are not connected to each other in a non-destructively detachable manner, and a non-destructively detachable connection is formed with a joining partner

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a layer stack of semiconductor layers having a first layer sub-stack forming a mesa, and a second layer sub-stack adjacent to the mesa in a stacking direction. Layers of the second layer sub-stack extend beyond layers of the first sub-stack in a direction perpendicular to the stacking direction. The semiconductor layers of the layer stack form an optical resonator having a first mirror, a second mirror, an active region between the first and second mirrors for laser light generation, and an oxide aperture layer forming a current aperture. The oxide aperture layer is made from Al.sub.1-xGa.sub.xAs with 0≤x≤0.05. The oxide aperture layer is a last layer of the mesa and immediately adjacent to a first layer of the second layer sub-stack. A first layer of the second layer sub-stack is a contact layer.

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

A vertical cavity surface emitting laser (VCSEL) emits laser light. The VCSEL has an optical resonator and a photodiode. The optical resonator has: a first mirror, an active region configured to generate laser light, and a second mirror. The active region is arranged between the first mirror and the second mirror. The photodiode is integrated in the optical resonator. The photodiode has: an absorption region having a plurality of absorbing layers configured to absorb the generated laser light. The absorbing layers are arranged spaced apart from one another by a distance d which satisfies the condition: d=(2k−1)λ/(4 m). Where λ is the wavelength of the laser light in the absorption region, and k and m are natural numbers≥1.

The present disclosure relates to an integrated light receiving and emitting device combined with a control circuit wafer and a manufacturing method thereof. The integrated light receiving and emitting device combined with a control circuit wafer according to an exemplary embodiment of the present disclosure includes: a light receiving and emitting unit which has an integrated wafer structure in which a light emitting unit and a light receiving unit are vertically formed on one surface of a single semiconductor substrate by wafer patterning and a control circuit wafer which is combined with the light receiving and emitting unit by vertical bonding to be operated as a single chip device, in which the control circuit wafer is connected to the light emitting unit and the light receiving unit.

The present disclosure provides a semiconductor optical signal amplifier for amplifying a light having an energy smaller than a band gap energy. The semiconductor optical signal amplifier includes: a first end surface; a second end surface, arranged apart from the first end surface; a first semiconductor region and a second semiconductor region, arranged between the first end surface and the second end surface; an active layer, arranged between the first end surface and the second end surface, and sandwiched between the first semiconductor region and the second semiconductor region, made of an indirect transition type semiconductor that amplifies a signal intensity of an input light by stimulated emission; a first electrode, connected to the first semiconductor region; and a second electrode, connected to the second semiconductor region and detecting a change in a carrier density in the active layer by a potential difference from the first electrode.