Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.

A synthesizer including a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and is configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A semiconductor laser is coupled to the DAC and is configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.

In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

A visible light source includes a substrate, a vertical-cavity surface-emitting laser including an active semiconductor region configured to emit infrared light and a first reflector configured to reflect the infrared light emitted by the active semiconductor region, a second reflector configured to reflect the infrared light and form a vertical cavity for the infrared light with the first reflector, and one or more micro-resonators configured to receive the infrared light and generate visible light in one or more colors using the infrared light through optical parametric oscillation. The visible light source also includes one or more output couplers configured to couple the visible light in one or more colors from the one or more micro-resonators into free space or into a photonic integrated circuit.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A laser system produces pulses having wavelengths between 2000 nm and 2100 nm, peak output powers greater than 1 kW, average powers greater than 10 W, pulse widths variable from 0.5 to 10 nsec, pulse repetition frequencies variable from 0.1 to over 2 MHz, and a pulse extinction of at least 60 dB. Pulses from a diode laser having a wavelength between 1000 nm and 1100 nm are amplified by at least one fiberoptic amplifier and applied as the pump input to an Optical Parametric Amplifier (OPA). A cw laser provides an OPA seed input at a wavelength between 2000 nm and 2200 nm. The idler output of the OPA having difference frequency wavelength between 2000 nm and 2100 nm is further amplified by a crystal amplifier. The fiberoptic amplifier can include Ytterbium-doped fiberoptic. The crystal amplifier can include a Ho:YAG, Ho:YLF, Ho:LuAG, and/or a Ho:Lu2O3 crystal.

A method (900) includes a gain current (I.sub.GAIN) to an anode of a gain-section diode (D.sub.0) disposed on a shared substrate of a tunable laser (310), delivering a modulation signal to an anode of an Electro-absorption section diode (D.sub.2) disposed on the shared substrate of the tunable laser, and receiving a burst mode signal (330) indicative of a burst-on state or a burst-off state. When the burst mode signal is indicative of the burst-off state, the method includes sinking a sink current (I.sub.SINK) away from the gain current at the anode of the gain-section diode. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method includes ceasing the sinking of the sink current away from the gain current and delivering an overshoot current (I.sub.OVER) to the anode of the gain-section diode.

Active bias circuits for integrated devices are described. In one example, an active bias circuit includes a voltage control element to establish a control voltage, an active bias device to provide a power bias responsive to the control voltage, and a compensation circuit connected to the active bias device. The compensation circuit can be configured to set output impedance and compensate for parasitic capacitance of the active bias device. In another embodiment, the voltage control element can be omitted, and a control voltage can be relied upon to directly control the power bias output provided by the active bias device. The active bias circuit can be used to power a driver of an integrated optical transmitter, in one example, among other possible applications.

Provided is a spatial light modulator includes a substrate; a distributed Bragg reflector (DBR) layer provided on a surface of the substrate; a cavity layer provided on the DBR layer; a pixel layer provided on the cavity layer, the pixel layer including a plurality of pixels; and a heat blocking member provided between the plurality of pixels and configured to block heat transfer between the plurality of pixels, wherein each of the plurality of pixels includes a plurality of active meta-patterns.

A device includes: a mesa stripe structure comprising a semiconductor in a stripe shape extending in a first direction, with first and second portions spaced apart in the first direction, and a third portion between the first and second portions; and an electrode pattern including a first electrode overlapping with the first portion but not overlapping with the second portion, and a second electrode overlapping with the second portion but not overlapping with the first portion. The first and second electrodes are separated. The electrode pattern comprises a metal in a shape of not overlapping with the third portion. The electrode pattern includes an adjacent area not overlapping with the mesa stripe structure. The adjacent area is next to the third portion in a second direction orthogonal to the first direction, and is on a semiconductor layer continuous to the mesa stripe structure.