A laser module includes a laser source and an optical marshalling module. The laser source is configured to generate and output a plurality of laser beams. The plurality of laser beams have different wavelengths relative to each other. The different wavelengths are distinguishable to an optical data communication system. The optical marshalling module is configured to receive the plurality of laser beams from the laser source and distribute a portion of each of the plurality of laser beams to each of a plurality of optical output ports of the optical marshalling module, such that all of the different wavelengths of the plurality of laser beams are provided to each of the plurality of optical output ports of the optical marshalling module. An optical amplifying module can be included to amplify laser light output from the optical marshalling module and provide the amplified laser light as output from the laser module.

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

A wavelength-multiplexed light transmission module according to the present invention includes a plurality of lasers that respectively emit a plurality of laser beams having different wavelengths, a lens radially emitting the plurality of laser beams, a bandpass filter that has a transmission center wavelength which is shorter as an incident angle is larger, and a mirror for reflecting the plurality of laser beams, wherein the plurality of laser beams are incident to the bandpass filter such that the incident angle of a laser beam is larger as the laser beam has a shorter wavelength, whereby the plurality of laser beams are transmitted through the bandpass filter, and an inclination angle of the mirror with respect to the bandpass filter is provided such that the plurality of laser beams transmitted through the bandpass filter are reflected by the bandpass filter and the mirror to be multiplexed with one another.

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

A switch module includes a switch integrated circuit (IC), a photonic integrated circuit (PIC), and a planar lightwave circuit (PLC). The PIC may include a plurality of light sources, an optical splitter, and a plurality of modulators. A dual MEMS may be used to align lens arrays, which may be used to couple light from the PIC to the PLC.

A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

A laser module includes a laser source and an optical marshalling module. The laser source is configured to generate and output a plurality of laser beams. The plurality of laser beams have different wavelengths relative to each other. The different wavelengths are distinguishable to an optical data communication system. The optical marshalling module is configured to receive the plurality of laser beams from the laser source and distribute a portion of each of the plurality of laser beams to each of a plurality of optical output ports of the optical marshalling module, such that all of the different wavelengths of the plurality of laser beams are provided to each of the plurality of optical output ports of the optical marshalling module. An optical amplifying module can be included to amplify laser light output from the optical marshalling module and provide the amplified laser light as output from the laser module.

A semiconductor optical integrated device according to the present invention includes a conductive substrate, a laser provided to the conductive substrate, a semi-insulating semiconductor layer provided on the conductive substrate, a photodiode provided on the semi-insulating semiconductor layer and a waveguide that is provided on the conductive substrate and guides output light of the laser to the photodiode, wherein an anode of the photodiode and a cathode of the photodiode are drawn from an upper surface side of the photodiode, and the waveguide and the photodiode are separated from each other by the semi-insulating semiconductor layer.

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

A switch module includes a switch integrated circuit (IC), a photonic integrated circuit (PIC), and a planar lightwave circuit (PLC). The PIC may include a plurality of light sources, an optical splitter, and a plurality of modulators. A dual MEMS may be used to align lens arrays, which may be used to couple light from the PIC to the PLC.