The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate including an active layer having a quantum cascade structure; a first electrode formed on a surface on an opposite side of the semiconductor laminate from the semiconductor substrate; a second electrode; and an insulating film formed on at least one end surface of a first end surface and a second end surface of the semiconductor laminate. The first electrode includes a first metal layer made of a first metal, and a second metal layer made of a second metal having a higher ionization tendency than that of the first metal. The first metal layer has a first region exposed to an outside. The second metal layer has a second region located on one end surface side with respect to the first region. The insulating film reaches the second region from the one end surface.

In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

Apparatuses, systems, and associated methods are described that provide an optical device with sealed optoelectronic component(s) without impacting effective optical performance of the optical device. An example optical device includes a substrate that defines a first surface and a second surface opposite the first surface. The optical device further includes an optoelectronic component supported by the first surface of the substrate where the optoelectronic component operates with optical signals. The optical device further includes a conformal coating applied to the first surface of the substrate such that at least a portion of the conformal coating is disposed on the optoelectronic component. The conformal coating substantially seals the optoelectronic component from an external environment of the optical device without impacting effective optical performance of the optical device. A thickness of the conformal coating may be determined based upon one or more operating parameters of the optoelectronic component.

A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.

A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

In at least one embodiment, the environment sensor for sensing at least one environment parameter includes a semiconductor layer sequence, a sheath, the index of refraction of which changes as a function of the environment parameter, and a first electrical contact and a second electrical contact for supplying current to the semiconductor layer sequence. The semiconductor layer sequence has the shape of a generalized cylinder having a main axis. In directions perpendicular to the main axis, the semiconductor layer sequence is at least partly covered by the sheath. The semiconductor layer sequence has an index of refraction which is greater than the index of refraction of the sheath. The semiconductor layer sequence is designed to form laser modes within the environment sensor. Furthermore, the environment sensor is designed such that, in its normal operation, a change in the index of refraction of the sheath causes a change in the electrical resistance of the semiconductor layer sequence as a result of a change in radiation losses within the semiconductor layer sequence.

An edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface, comprising: an edge-emitting semiconductor laser die having a rear mirror surface and a front mirror surface on the lateral side, and the electromagnetic radiation generated by the edge-emitting semiconductor laser die is in the wavelength range of 635 nm to 1550 nm; a rear mirror surface coating; and a front mirror surface e, and a passivation layer, an affinity layer, a high thermal conductivity layer and a protective layer. Whereby, providing an edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface, and the front mirror surface coating is made of high thermal conductivity insulating materials to form a multi-layer coating structure, so that the front mirror surface coating has the effect of high thermal conductivity and low reflection.