The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

An optical device may include an emitter array including a plurality of emitter groups. Each emitter group may be independently addressable from other emitter groups, of the plurality of emitter groups, for independently lasing. Emitters of the plurality of emitter groups may be interspersed within the emitter array such that a minimum emitter-to-emitter distance within the emitter array is less than a minimum emitter-to-emitter distance within any of the emitter groups.

Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.

A laser module includes a base, a carrier mounted on the base, a laser diode mounted on the carrier, an organic adhesive layer provided between the laser diode and the carrier, the organic adhesive layer having an exposed portion exposed between the laser diode and the carrier, a cap fixed to the base, the cap covering the carrier, the laser diode, and the organic adhesive layer, and a cover material covering at least a part of the exposed portion of the organic adhesive layer.

A semiconductor laser element includes a semiconductor-containing part, an electrode and at least one metal film. The semiconductor-containing part has first and second main surfaces, a light emitting end surface, a light reflecting end surface, and an optical waveguide. A distance between the first main surface and the optical waveguide is greater than a distance between the second main surface and the optical waveguide. The electrode is provided on the first main surface. The metal film is provided on the first main surface at a position spaced apart from the electrode. The metal film is in contact with a first side of an outer edge of the first main surface on a side of the light emitting end surface. The metal film is arranged at a position that does not overlap the optical waveguide in a plan view seen along a normal direction of the first main surface.

In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

Disclosed are photonic particles and methods of using particles in biological samples. The particles are configured to emit laser light when energetically stimulated by, e.g., a pump source. The particles may include a gain medium with inorganic materials, an optical cavity with high refractive index, and a coating with organic materials. The particles may be smaller than 3 microns along their longest axes. The particles may attach to each other to form, e.g., doublets and triplets. The particles may be injection-locked by coupling an injection beam into a particle while pumping so that an injection seed is amplified to develop into laser oscillation. A microscopy system may include a pump source, beam scanner, spectrometer with resolution of less than 1 nanometer and acquisition rate of more than 1 kilohertz, and spectral analyzer configured to distinguish spectral peaks of laser output from broadband background.

A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.