The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).

Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

A quantum cascade laser comprises: a laser structure including a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on the first and second regions; a metal layer disposed on the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in order in a direction of a first axis. The laser structure has a terrace on a boundary between the second and third regions, and the laser structure includes a semiconductor mesa and a conductive base. The semiconductor mesa has a core layer, and the conductive base mounts the semiconductor mesa. The high-specific resistance region has a specific resistance larger than that of the conductive base.

Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength o, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength a, which is 500 nm or more and is in a range of oX nm (5X15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of oX nm.

Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

A quantum cascade laser comprises: a laser structure including a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on the first and second regions; a metal layer disposed on the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in order in a direction of a first axis. The laser structure has a terrace on a boundary between the second and third regions, and the laser structure includes a semiconductor mesa and a conductive base. The semiconductor mesa has a core layer, and the conductive base mounts the semiconductor mesa. The high-specific resistance region has a specific resistance larger than that of the conductive base.

A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength o, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength a, which is 500 nm or more and is in a range of oX nm (5X15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of oX nm.