An insulating film (10) having an opening (11) is formed on a contact layer (7). A shape stabilization layer (8) having an inclined surface (9) is formed on the contact layer (7) in a peripheral portion of the opening (11). An underlying metal (12) covers an upper surface of the contact layer (7) exposed through the opening (11) and the inclined surface (9). A plating (13) is formed on the underlying metal (12).

A power over fiber system includes a power sourcing equipment, a powered device, an optical fiber cable, a measurer and a control device. The power sourcing equipment includes a semiconductor laser that oscillates with electric power, thereby outputting feed light. The powered device includes a photoelectric conversion element that converts the feed light into electric power. The optical fiber cable transmits the feed light from the power sourcing equipment to the powered device. The measurer measures a distance from the power sourcing equipment to the powered device. The control device controls the power sourcing equipment to output the feed light by changing a laser wavelength thereof for the distance from the power sourcing equipment to the powered device measured by the measurer.

A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.

A Vertical Cavity Surface Emitting Laser (VCSEL) has a mesa having an active region, which has m active layer structures (with m≥2). The active layer structures are electrically connected to each other by a tunnel junction therebetween. The mesa has an optical resonator, which has first and second DBRs. The active region is between the first and second DBRs. The VCSEL has first and second electrical contacts, which provide electrical current to the active region, and an electrical control contact, which controls gain-switched laser emission of the VCSEL by at least 1 up to m−1 active layer structures by a current between the electrical control contact and the first or second electrical contact. A current aperture is between the active region and the first or second electrode. A distance between the current aperture and a furthest active layer structure is at least three times the laser light's wavelength.

An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an In.sub.xGa.sub.1-xAs layer, where 0≤x<1. The light absorption region has an In.sub.yGa.sub.1-yAs layer, where 0<y<1, and y>x. The In.sub.yGa.sub.1-yAs layer is an intrinsic layer of the light absorption region. The In.sub.yGa.sub.1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the In.sub.yGa.sub.1-yAs layer. The In.sub.yGa.sub.1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.