Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.

A light-emitting component includes a substrate, plural light-emitting elements that are disposed on the substrate and emit light in a direction intersecting with a surface of the substrate, and a gate electrode that is electrically connected to each of the plural light-emitting elements and that performs control so that the plural light-emitting elements are switched ON/OFF together. A distance between each of the plural light-emitting elements and the gate electrode is smaller than a largest distance between two light-emitting elements among the plural light-emitting elements.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

An apparatus has an illumination layer having an array of a plurality of illuminators, and a circuit layer having one or more drivers for controlling the plurality of illuminators. The laser layer and the circuit layer overlap at least partially, and each driver of the one or more drivers controls at least one illuminator of the plurality of illuminators.

A light emitting device includes semiconductor laser elements, a frame part, a light-reflective member, a step part, metal films, wires, and a first protective element. The frame part surrounds a bottom surface on which the semiconductor laser elements are disposed. The light-reflective member is disposed on the bottom surface inside of a frame formed by the frame part. The step part is formed along a second inner lateral surface of the frame part, and disposed inside of the frame. The metal films are provided on an upper surface of the step part. The wires electrically connect the semiconductor laser elements respectively to the metal films. The first protective element is disposed on the upper surface of the step part and on a light traveling side of the laser light with respect to a plane including an emitting end surface of the first semiconductor laser element.

Disclosed is a VCSEL array with improved optical properties. According to one aspect of the present embodiment, a VCSEL array has improved output light characteristics by minimizing the effects of resistance, inductance, and capacitance inevitably caused in a package.

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m.Math.K or more; a light-emitting element that has a cathode electrode and an anode electrode and is provided on a front surface side of the base member; a capacitive element that is provided on the base member and supplies an electric current to the light-emitting element; and a reference potential wire that is provided on a rear surface side of the base member and is connected to an external reference potential. The reference potential wire is connected to the capacitive element and is insulated from the cathode electrode and the anode electrode.

A projector includes a laser source, a light modulation element configured to modulate light emitted from the laser source in accordance with image information, and a light transmissive member disposed in a light path between the laser source and the light modulation element, and configured to transmit the light emitted from the laser source, wherein the laser source and the light modulation element are bonded to the light transmissive member, the laser source includes a substrate, and a laminated structure provided to the substrate, and having a light emitting layer configured to emit light, and the laminated structure constitutes a photonic crystal structure configured to confine the light emitted by the light emitting layer in an in-plane direction of the substrate, and emit the light emitted by the light emitting layer in a normal direction of the substrate.