A method for generating light emission is provided. The method includes providing a transistor element including collector, emitter, and base regions, a quantum cascade region between the base and collector regions, and quantum well structures for interband emission within the base or emitter regions. A waveband controller applies, via first and second electrodes with respect to the collector and base regions, a first electrical signal to control a base-collector junction bias level and select between first and second base-collector bias levels. Selection of the first base-collector bias level causes at least one of the emitter and base regions to produce interband-based light emission having a first wavelength of a first wavelength band. Selection of the second base-collector bias level causes the quantum cascade region to produce intraband-based light emission having a second wavelength of a second wavelength band.

A semiconductor laser element includes a substrate and a semiconductor stack. The semiconductor stack includes an N-side semiconductor layer, an active layer, a P-side semiconductor layer, and a P-type contact layer. The semiconductor stack includes two end faces. Laser light resonates between the two end faces. The semiconductor stack includes: a ridge portion; and a bottom portion surrounding the ridge portion in a top view of the semiconductor stack. The ridge portion protrudes upward from the bottom portion, is spaced apart from the two end faces, and includes at least a portion of the P-type contact layer. A current injection window is provided only on the ridge portion out of a top face of the semiconductor stack, the current injection window being a region into which a current is injected. A distance from a top face of the active layer to the bottom portion is constant.

The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

A semiconductor laser comprises a ridge formed on an n-type semiconductor substrate, a buried layer buried so as to cover both sides in an x-direction perpendicular to a y-direction, which is the direction in which the ridge extends. In a positive side of a z-direction that is the direction in which the ridge protrudes and the positive side of the buried layer in the z-direction, provided are a p-type second cladding layer, a p-type contact layer, a surface-side electrode that is connected to the p-type contact layer, and a semi-insulating layer that is formed on an outer edge separated from the ridge in the x-direction. The semi-insulating layer or the front surface-side electrode is formed on sides toward x-direction ends of the semiconductor laser on the positive side in the z-direction.

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

A method for forming a metal contact in a deep hole in a workpiece. A first hole is formed that extends from the upper surface of the workpiece to a substrate at the bottom of the hole. The hole is then filled with photoresist. Next, a photolithographic process is performed to create a second hole within the photoresist and to expose the substrate; and a wet etch is performed to remove a portion of the substrate. A layer of contact metal is then deposited on the surface of the photoresist. In the second hole, the metal layer is formed on the exposed surface of the substrate and on discontinuous portions of the photoresist on the sidewalls. A liftoff process is then used to remove the photoresist and the metal deposited on the photoresist while leaving the metal at the bottom of the second hole in contact with the substrate.