A laser device includes a laser and a controller. The laser has an optical cavity that includes an active gain section and a phase shifter. The controller is configured to excite the active gain section to lase light out of the optical cavity. The controller is further configured to, while the light is being lased out of the optical cavity, modulate a refractive index of the phase shifter to shift an optical phase of lasing modes of the lased light to thereby reduce coherence of the lased light.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

A semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface, the mesa including a top surface and two side surfaces on both sides of the top surface, and extending along the base surface; and an electric resistor including a top wall provided on the top surface and a side wall provided on at least one of the two side surfaces, the electric resistor being configured such that a current flows in an extending direction of the mesa.

An optical semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface and extending along the base surface; an optical waveguide layer provided inside the mesa or provided inside the base so as to have a region at least overlapping with the mesa in the first direction; an electric resistance layer including a first region provided on the mesa, and a first extending portion extending from the first region in a direction intersecting an extending direction of the mesa; and a wiring layer including a second region electrically connected to the electric resistance layer and configured to partially cover the first region, and a second extending portion configured to at least partially cover the first extending portion and extending from the second region in a direction intersecting the extending direction of the mesa.

A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Described are methods and a system for atomic memory operations with contended cache lines. A processing system includes at least two cores, each core having a local cache, and a lower level cache in communication with each local cache. One local cache configured to request a cache line to execute an atomic memory operation (AMO) instruction, receive the cache line via the lower level cache, receive a probe downgrade due to other local cache requesting the cache line prior to execution of the AMO, and send the AMO instruction to the lower level cache for remote execution in response to the probe downgrade.

An optical waveguide structure includes a lower cladding layer positioned on a substrate; an optical guide layer positioned on the lower cladding layer; an upper cladding layer positioned on the optical guide layer; and a heater positioned on the upper cladding layer. The lower cladding layer, the optical guide layer, and the upper cladding layer constitute a mesa structure. The optical guide layer has a lower thermal conductivity than the upper cladding layer. An equation “W.sub.wg≤W.sub.mesa≤3×W.sub.wg” is satisfied, wherein W.sub.mesa represents a mesa width of the mesa structure, and W.sub.wg represents a width of the optical guide layer. The optical guide layer occupies one-third or more of the mesa width in a width direction of the mesa structure.

Laser processing device (100) includes laser oscillator (10) that generates laser light beam (LB), optical fiber (30) that transmits laser light beam (LB), laser head (40) that emits laser light beam (LB) to workpiece (W), and chiller (50) that passes and circulates cooling water through laser oscillator (10) to cool laser oscillator (10). Laser oscillator (10) includes: a plurality of laser diodes; and a base having a cooling water channel therein and having the laser diodes mounted on a surface thereof. Laser processing device (100) is configured to change the incident angle of laser light beam (LB) entering optical fiber (30) by changing the water pressure of the cooling water flowing through the cooling water channel.