Patent classifications
H01S5/0612
Tunable laser with directional coupler
A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser.
Tunable wavelength filter with embedded metal temperature sensor and its application to external-cavity type tunable wavelength laser
Provided are a tunable wavelength filter with an embedded metal temperature sensor and an external-cavity type tunable wavelength laser module. In detail, the tunable wavelength filter with an embedded metal temperature sensor and the external-cavity type tunable wavelength laser module achieve wavelength stability by forming a metal temperature sensor using a resistance change of a metal thin film according to temperature on a point on an isothermal layer having the same temperature distribution as the optical waveguide during a process for fabricating the optical waveguide with polymer to accurately measure a temperature of an optical waveguide.
IMPROVED LASER STRUCTURE
A laser structure comprising a first photonic crystal surface emitting laser (PCSEL), a second PCSEL, and a coupling region that extends between the first PCSEL and the second PCSEL along a longitudinal axis and that is electrically controllable so as to be capable of coherently coupling the first PCSEL to the second PCSEL. Each PCSEL include an active layer, a photonic crystal, and a two-dimensional periodic array distributed in an array plane parallel to the longitudinal axis within the photonic crystal where the two-dimensional periodic array is formed of regions having a refractive index that is different to the surrounding photonic crystal.
EXTERNAL CAVITY LASER WITH REDUCED OPTICAL MODE-HOPPING
An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.
Tunable laser including parallel lasing cavities with a common output
A parallel cavity tunable laser generally includes a semiconductor laser body defining a plurality of parallel laser cavities with a common output. Each of the parallel laser cavities is configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser cavities may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser cavities is emitted from the common output at a front facet of the laser body. By selectively generating light in one or more of the laser cavities, one or more channel wavelengths may be selected for lasing and transmission.
IMPROVEMENTS IN OR RELATING TO A DISTRIBUTED FEEDBACK LASER DEVICE FOR PHOTONICS INTEGRATED CIRTUIT AND A METHOD OF MANUFACTURE
A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.
Electro-absorption modulator, optical semiconductor device and optical module
An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
Reflector structure for tunable laser and tunable laser
A reflector structure for a tunable laser and a tunable laser. A super structure grating is used as a reflector structure, and a suspended structure is formed around a region in which the super structure grating is located, to implement, using the suspended structure, thermal isolation around the region in which the super structure grating is located, and increase thermal resistance, such that less heat is lost, and heat is concentrated in the region in which the super structure grating is located, thereby improving thermal tuning efficiency of the reflector structure. Moreover, lateral support structures are disposed on two sides of the suspended structure, to provide a mechanical support for the suspended structure. In addition, regions in the super structure grating that correspond to any two lateral support structures on a same side of the suspended structure fall at different locations in a spatial period of the super structure grating.
Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits
Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.
CONTROL SYSTEM FOR REGULATING TEMPERATURE FOR LASER DIODES
A control system includes one or more laser diodes generating a spectral output at a specific center wavelength when the one or more laser diodes are at a target temperature range, one or more oscillating heat pipes, one or more sensors configured to monitor a current temperature of the one or more laser diodes, and a heater configured to generate heat. The one or more laser diodes are thermally coupled to the one or more oscillating heat pipes. The control system also includes one or more processors in electronic communication with the one or more laser diodes and the heater and a memory coupled to the one or more processors. The memory stores data into one or more databases and program code that, when executed by the one or more processors, causes the control system to instruct the heater to generate heat for pre-heating the one or more laser diodes to the target temperature range.