A device controller (16) for directing a drive current (12A) to a device (12) includes a current driven power source (40) that is electrically connected to the device (12); and a current adjuster (22) electrically connected to the power source (40) in parallel to the device (12). The current adjuster (22) selectively adjusts the drive current (12A) directed to the device (12). For a laser (12), the current adjuster (22) can adjust the drive current (12A) to modulate a center wavelength of an illumination beam (20) generated by the laser (12).

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A control system includes a field-programmable gate array (FPGA), a digital-to-analog conversion (DAC) circuit, an external TEC driver, and a pump chip. The field-programmable gate array (FPGA) includes a pump driver and a thermoelectric-cooler (TEC) controller. The digital-to-analog conversion (DAC) circuit is coupled to the FPGA. The external TEC driver is external to the FPGA and coupled to the FPGA. The pump chip includes a pump and a TEC and is coupled to the DAC circuit and the external TEC driver.

A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.

A modulator-integrated semiconductor laser (100) includes a semiconductor laser (101), an electro-absorption modulator (102), and an optical attenuator (103) that are monolithically integrated. The electro-absorption modulator (102) and the optical attenuator (103) are connected in series in a stage succeeding the semiconductor laser (101). A control unit (44) controls the DC bias voltage to be applied to the optical attenuator (103) to increase as temperature of the modulator-integrated semiconductor laser (100) rises.

Aspects of the present disclosure describe systems, methods and structures including an integrated-optics-based externa-cavity laser configured for mode-hop-free wavelength tuning having an increased continuous tuning range with an ultra-narrow linewidth by increasing tuning sensitivity. Ultra-narrow linewidth is provided by extending cavity length with a multi-pass resonator based filter that may advantageously include tunable microring resonators that enable single-mode oscillation while contributing to the optical length of the laser with multiple passes of light through the ring(s) per roundtrip in the laser cavity. Further aspects of the present disclosure describe systems, methods, and structures exhibiting an enhanced “tuning sensitivity”—defined by a continuous wavelength shift per induced cavity phase shift by a phase section. Such tuning sensitivity is increased by approximately a factor of 3 for synchronous tuning of phase section and ring resonators as compared to tuning phase section only.

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

Apparatus and a method are disclosed for calibrating and tuning a wavelength-tunable semiconductor laser. In an assembly, the wavemeter is integrated with the laser, and plural temperature sensors are coupled to plural, spatially separated functional elements of the wavemeter by thermal conduction. A tuning circuit generates tuning signals for the laser that are responsive to wavemeter output signals and to temperature-indication signals from the plural temperature sensors. Temperature effects on the tuning can be mitigated.