A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal.

A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and/or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).

A vertical cavity surface emitting laser (VCSEL) is formed on a substrate. The VCSEL includes a layer structure and one or more distributed Bragg reflector (DBR) mirrors formed on at least one of the layer structure or the substrate. The layer structure generates an optical signal at a first wavelength based on a control current received from a transistor that is formed on the substrate. Rare earth ions (REIs) are deposited in the one or more DBR mirrors such that the one or more DBR mirrors receive the optical signal at the first wavelength and generate the optical signal at a second wavelength.

A DFB laser DC-coupled output power configuration scheme with adjustable voltage difference. utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors C1 and C2, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V and the problems that the output eye diagram is severely cracked and cannot be used when the traditional DFB laser configuration scheme with an external 3.3V power supply is tested at high temperature are solved.

Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.

Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Disclosed are a VCSEL diode and a VCSEL diode array having a common anode structure. An aspect of the present disclosure provides the VCSEL diode and the VCSEL diode array, which smoothly perform an operation and improve the quality of output light because the VCSEL diode and the VCSEL diode array have a common anode structure.

A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.

The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

A grating based optical transmitter includes a light source region coupled to an interference region, two reflective regions on both sides of the interference region, and one or several gratings interacting with the interference light wave in the interference region causing a vertical emission. Two electrodes are used to inject electrical carriers, and a third electrode can be added to modulate the electrical carrier density recombined in the light source region. Compared to conventional edge-emitting laser with two electrodes, the grating-based optical transmitter in this invention largely reduces the packaging cost and complexity due to the vertical emission, and largely enhances the modulation bandwidth due to the three-terminal configuration.