To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer (306) for emitting light through recombination of an electron and a hole; a diffraction grating (309) having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer (311) including at least Al, made of In and group-V compound, and formed on the diffraction grating; and a second semiconductor layer (307) including Mg, made of In and group-V compound, and formed on the first semiconductor layer (311).

Provided is an optical transmission module in which noise is further reduced. The optical transmission module includes a first semiconductor layer having a first electrode arranged thereon, an active layer with a stripe shape formed on the first semiconductor layer, and a second semiconductor layer with a stripe shape formed on the active layer. The second semiconductor layer has a second electrode arranged thereon and includes a diffraction grating arranged along an extending direction of the active layer. The active layer includes a first portion having first stripe width, a second portion having a second stripe width smaller than the first stripe width, and a connection portion having a varying stripe width so as to connect the first portion and the second portion to each other. The diffraction grating overlaps with the first portion and does not overlap with the second portion in planar view.

A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area.

An optoelectronic module is provide and includes an electronic unit, an optical unit, and an interconnect structure. The electronic unit is capable of outputting and/or receiving electric signals, while the optical unit is capable of converting the electric signals into optical signals. The interconnect structure connects the electronic unit and the optical unit, and includes an electrically conducting substrate and a pair of transmission leads connecting electronic unit and the optical unit. The pair of transmission leads includes a signal lead and a ground lead having lower impedance than the signal lead.

A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long wavelength edge of a reflection peak of the etalon.

A two-section semiconductor laser includes a gain section and a modulation-independent grating section to reduce chirp. The modulation-independent grating section includes a diffraction grating for reflecting light and forms a laser cavity with the gain section for lasing at a wavelength or range of wavelengths reflected by the diffraction grating. The gain section of the semiconductor laser includes a gain electrode for driving the gain section with at least a modulated RF signal and the grating section includes a grating electrode for driving the grating section with a DC bias current independent of the modulation of the gain section. The semiconductor laser may thus be directly modulated with the modulated RF signal without the modulation significantly affecting the index of refraction in the diffraction grating, thereby reducing chirp.

A header, with improved cooling for electronic components for radio frequency signal transmission, for an electronic component for radio frequency data transfer, includes: a metallic base body including a plurality of electrical feedthroughs; a thermoelectric cooling element having one side bearing on the base body and an opposite side for mounting the electronic component; a radio frequency line to the electronic component being on the side for mounting the electronic component, with a ground conductor that is electrically connected to the metallic base body, the electrical connection to the metallic base body including a telluride element.

A vertical cavity surface emitting laser includes a substrate that has a main surface including a first area and a second area, a post that is provided on or above the first area, and that includes a first-conductive first distributed Bragg reflector provided on or above the first area, an active layer provided on the first distributed Bragg reflector, and a second-conductive second distributed Bragg reflector provided on the active layer, a stack that is provided on or above the main surface, and that includes an upper surface having at least one recess portion disposed above the second area, a resin portion that is disposed in the at least one recess portion, and an electrode pad that is provided on the resin portion and that is electrically connected to either one of the first distributed Bragg reflector and the second distributed Bragg reflector.

An optical semiconductor device includes an insulative base having first and second surfaces, and a metallic pattern formed on the first surface and including a grounding pattern, a transmission pattern having a line connected between input and output ends thereof, and first and second patterns, where the first pattern is located between the second surface crossing a direction parallel to the first surface, and the second pattern. The device includes a laser chip, mounted on the first surface between the transmission pattern and the first and second patterns, and having an electrode and a light emitting end located between the electrode and the second surface, a first wire connecting the output end to the electrode, a second wire connecting the electrode to the first pattern, an inductor provided on the first surface connected between the first and second patterns and formed by a meander wiring or a bonding wire.

The present invention proposes an O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method, by using different buffer layers to form the growth surface of InP material with low dislocation density; N—InAlGaAs is used instead of conventional N—InAlAs electron-blocking layer in the epi-structure to reduce the barrier for electrons to enter the quantum wells from N-type and lower the threshold; a superlattice structure quantum barrier is used instead of a single layer barrier structure to improve the transport of heavy holes in the quantum wells; and the material structure is adjusted to achieve a reliable O-band high direct modulation speed semiconductor laser diode for optical communication on silicon substrate.