An optical semiconductor module according to the embodiment includes: a board including a transmission line; a block including a low-permittivity material; an inductor mounted on the block, the inductor being connected with the transmission line via a first wire, the first wire having a first inductance; a semiconductor laser device mounted on the board, the semiconductor laser device being connected with the transmission line via a second wire, the second wire having a second inductance smaller than the first inductance; and

a housing configured to accommodate the board, the block, the inductor, and the semiconductor laser device.

An optical semiconductor module according to an embodiment includes a housing; a temperature control element having a temperature control plane; a first board mounted on the temperature control plane; a semiconductor laser device mounted on the second side of the first board; a second board mounted on the second side of the first board, the second board having a third side and a fourth side, the fourth side including a wiring pattern, the wiring pattern being electrically connected with the housing via a first bonding wire and electrically connected to the semiconductor laser device via a second bonding wire, the second board having a second thermal conductivity smaller than the first thermal conductivity. The housing is configured to accommodate the temperature control element, the first board, the second board, and the semiconductor laser device.

A directly-modulated laser diode with GSG coplanar electrodes comprises a semi-insulating semiconductor substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, an insulating layer of dielectric material, a P-type electrode, and two N-type electrodes. It is characterized in that the two N-type electrodes are disposed on the N-type semiconductor layer and connected to the top of insulating layer along the sidewall to form a coplanar surface, the P-type electrode and the two N-type electrodes are GSG (ground-signal-ground) coplanar electrodes. The disclosure uses a hybrid coplanar waveguide structure with a higher direct modulation speed, and can be integrated with flip chip technology. Therefore, the disclosure reduces the signal transmission loss caused by package wiring and reduces the thermal effect caused by the device itself, and significantly improves the high frequency and photoelectric characteristics at high temperature.

An electronic-element mounting package includes a wiring substrate having a first surface and a wiring pattern thereon; a base having a second surface and a through hole whose opening is on the second surface; a signal line penetrating the through hole and having a first end exposed from an opening of the through hole; and an insulating member between an inner surface of the through hole and the signal line and has an end portion and a main portion. The end portion has an end surface on a side of the opening of the through hole, and the main portion is farther from the opening of the through hole than the end portion. The electronic-element mounting package also has a conductive joining material with which the wiring pattern and the first end are joined. Permittivity of the end portion is larger than permittivity of the main portion.

A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long wavelength edge of a reflection peak of the etalon.

A semiconductor light modulator (5) modulates light in accordance with a high-frequency wave signal (11). A terminal matching circuit (12) is connected in parallel to the semiconductor light modulator (5). The terminal matching circuit (12) has a resistor (8) and a capacitor (9) of 0.1 pF or lower connected in parallel to the resistor (8).

A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.

An optoelectronic assembly is disclosed. The disclosed assembly includes one or more lasers formed on a first substrate, and a programmable driver circuit formed on a second substrate configured as an integrated circuit. The first and second substrates are mounted on a third substrate in a stacked arrangement.

A wide-angle illuminator module including a rigid support structure having a plurality of angled faces, a flexible circuit including one or more VCSEL arrays, each VCSEL array positioned over a face among the plurality of angled faces, each VCSEL array including a plurality of integrated microlenses with one microlens positioned over each VCSEL in the VCSEL array, and a driver circuit for providing electrical pulses to each VCSEL array, wherein the plurality of VCSEL arrays address illumination zones in a combined field of illumination. The support structure may also be a heatsink. The flexible circuit may be a single flexible circuit configured to be placed over the support structure or a plurality of flexible circuits, each including one VCSEL array.

A two-kappa DBR laser includes an active section, a HR mirror, a first DBR section, and a second DBR section. The HR mirror is coupled to a rear of the active section. The first DBR section is coupled to a front of the active section, the first DBR section having a first DBR grating with a first kappa κ1. The second DBR section is coupled to a front of the first DBR section such that the first DBR section is positioned between the active section and the second DBR section. The second DBR section has a second DBR grating with a second kappa κ2 less than the first kappa κ1. The two-kappa DBR laser is configured to operate in a lasing mode and has a DBR reflection profile that includes a DBR reflection peak. The lasing mode is aligned to a long wavelength edge of the DBR reflection peak.