H01S5/0651

MULTI-WAVELENGTH LASER GENERATOR USING RING FILTER

Embodiments of the present disclosure are directed to multi-wavelength laser generator may produce light with a frequency comb having equally spaced frequency lines. In various embodiments, the laser generator includes first, a semiconductor gain element is used to provide gain to the laser being generated. Second, a ring resonator filter, or ring filter, is used to select the wavelength comb spacing. Third, a narrow-band DBR or narrow-band mirror is used to select the number of wavelengths that lase. Fourth, a wide-band or narrow-band mirror is used to provide optical feedback and to form the optical cavity. Fifth, a phase tuner section is used to align the cavity modes with the ring resonances (i.e. the ring filter modes) in order to reduce or minimize the modal loss. Other embodiments may be described and/or claimed.

GENERATION OF HIGH-POWER SPATIALLY-RESTRUCTURABLE SPECTRALLY-TUNABLE BEAMS IN A MULTI-ARM-CAVITY VECSEL-BASED LASER SYSTEM
20210210928 · 2021-07-08 ·

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.

Thermal management of laser diode mode hopping for heat assisted media recording

A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.

MEMS tunable VCSEL powered swept source OCT for 3D metrology applications
10890431 · 2021-01-12 · ·

Disclosed is an optical probe system that is capable of high speed, high precision, and high resolution 3D digitalization of engineered objects. The 3D dimensional data of the engineered object is measured using a swept source optical coherence tomography system with improved speed, spatial resolutions, and depth range. Also disclosed is a type of coordinate measurement machine (CMM) that is capable of performing high speed, high resolution, and non-contact measurement of engineered objects. The mechanic stylus in the touch-trigger probe of a conventional CMM is replaced with an optical stylus with reconfigurable diameter and length. The distance from the center of the optical stylus to the measurement probe is optically adjusted to match the height of the object to be measured quickly, which eliminates one dimensional movement of the probe and greatly improves the productivity.

Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array
10840675 · 2020-11-17 · ·

A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

OPTOELECTRONIC DEVICE COMPRISING A CENTRAL SEGMENT TENSILELY STRAINED ALONG A FIRST AXIS AND ELECTRICALLY BIASED ALONG A SECOND AXIS

The invention relates to an optoelectronic device comprising a semiconductor layer 10 formed from a central segment 20 and at least two lateral segments forming tensioning arms 30 that extend along a longitudinal axis A1. The semiconductor layer 10 furthermore comprises at least two lateral segments forming electrical biasing arms 40 that extend along a transverse axis A2 orthogonal to the axis A1.

WAVELENGTH-MULTIPLEXED LIGHT TRANSMISSION MODULE AND METHOD FOR MANUFACTURING SAME
20200321747 · 2020-10-08 · ·

A wavelength-multiplexed light transmission module according to the present invention includes a plurality of lasers that respectively emit a plurality of laser beams having different wavelengths, a lens radially emitting the plurality of laser beams, a bandpass filter that has a transmission center wavelength which is shorter as an incident angle is larger, and a mirror for reflecting the plurality of laser beams, wherein the plurality of laser beams are incident to the bandpass filter such that the incident angle of a laser beam is larger as the laser beam has a shorter wavelength, whereby the plurality of laser beams are transmitted through the bandpass filter, and an inclination angle of the mirror with respect to the bandpass filter is provided such that the plurality of laser beams transmitted through the bandpass filter are reflected by the bandpass filter and the mirror to be multiplexed with one another.

Multi-wavelength semiconductor lasers

Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

SUPERMODE FILTERING WAVEGUIDE EMITTERS
20200287346 · 2020-09-10 ·

An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

NARROW-LINEWIDTH TUNABLE EXTERNAL CAVITY LASER

A narrow-linewidth tunable external cavity laser includes, sequentially arranged along an optical path, a laser gain chip, a collimating lens, a bandpass filter, a tunable filter, and an output cavity surface. The laser gain chip includes a first end surface and a second end surface positioned along the optical path. The first end surface is further away from the collimating lens and is coated with a highly reflective film to form an external cavity with the output cavity surface.