A diode control device include a first terminal for receiving a first power supply voltage and a second terminal for receiving a second power supply voltage. A circuit of the diode control device applies a regulated voltage on the anode of the diode in response to a control voltage. The control voltage is equal to a preset voltage when a reference voltage is less than or equal to zero. Conversely, when the reference voltage is greater than zero, the control voltage is equal to the sum of the present voltage and a difference between cathode voltage of the diode and the reference voltage.

A diode control device include a first terminal for receiving a first power supply voltage and a second terminal for receiving a second power supply voltage. A circuit of the diode control device applies a regulated voltage on the anode of the diode in response to a control voltage. The control voltage is equal to a preset voltage when a reference voltage is less than or equal to zero. Conversely, when the reference voltage is greater than zero, the control voltage is equal to the sum of the present voltage and a difference between cathode voltage of the diode and the reference voltage.

An architecture for current driver circuitry for diode laser systems is contemplated whereby the circuitry is both modular and minimally complex with respect to the number of components and connections.

There is provided a system for testing a VCSEL die including a first beam splitter, a second beam splitter, a first polarizer, a second polarizer, a first light sensor, a second light sensor and a third light sensor. The first beam splitter divides an emission light beam of the VCSEL die to a first light beam and a second light beam. The second beam splitter divides the second light beam to a third light beam and a fourth light beam. The first polarizer has a first polarization direction and is arranged for the third light beam to pass through. The second polarizer has a second polarization direction and is arranged for the fourth light beam to pass through. The first light sensor receives the first light beam. The second light sensor receives the polarized third light beam. The third light sensor receives the polarized fourth light beam.

A semiconductor laser evaluation method of the present invention acquires an intersection point between an approximate straight line acquired by a linear approximation for a predetermined measurement point and an X-axis, in a current-light output characteristic which represents, as a relationship between an injection current of the semiconductor laser and an optical output of the semiconductor laser, the injection current on the X-axis and the optical output on a Y-axis, and determines a minimum value of local maximum values of the intersection points obtained by shifting the measurement point, as a threshold current of the semiconductor laser. Thus, the present invention can provide a semiconductor laser evaluation method capable of accurately evaluating the threshold current of a semiconductor laser.

In an embodiment a semiconductor laser component includes a plurality of semiconductor lasers, each of the semiconductor lasers configured to emit primary electromagnetic radiation of a primary spectral bandwidth in a visible wavelength range and a beam combiner configured to combine the primary electromagnetic radiations emitted from the semiconductor lasers, form secondary electromagnetic radiation from a superposition of the primary electromagnetic radiations of the semiconductor lasers and couple the secondary electromagnetic radiation out from the beam combiner, wherein the secondary electromagnetic radiation has a secondary spectral bandwidth that is at least twice as large as an average value of the primary spectral bandwidths.